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- Chen, Liu, 1973, et al.
(författare)
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Reliability Investigation for Encapsulated Isotropic Conductive Adhesives Flip Chip Interconnection
- 2006
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Ingår i: Journal of Electronic Packaging, Transactions of the ASME. - : ASME International. - 1528-9044 .- 1043-7398. ; 128:3, s. 177-183
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Tidskriftsartikel (refereegranskat)abstract
- Isotropic conductive adhesives (ICA) are gaining more and more application interests in electronic manufacturing, however, their failure mechanism is not been fully understood. In this paper we present reliability investigations on an encapsulated ICA flip chip interconnection. Experimental work included product lifetime measurement, cross section observation, and whole module warpage scanning. Results revealed that the chip-size effect on the ICA lifetime was obvious. A theoretical analysis was conducted with Finite Element Method (FEM) simulation. Viscoelastic models for adhesives and underfill materials were employed, and the comparison with an elastic model was made. Calculated equivalent stresses S eqv and shear stress σ xy fitted well with the experimental lifetime measurement, thus a lifetime relationship similar to the Coffin-Manson formula was established to predict the thermal fatigue life of an encapsulated ICA flip chip. Furthermore, the influences of underfill properties on the ICA reliability were discussed. Copyright © 2006 by ASME.
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- Raeissi, Bahman, 1979, et al.
(författare)
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Electron traps at HfO2/SiOx interfaces
- 2008
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Ingår i: Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK. - 1930-8876. - 9781424423637 ; , s. 130-133
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Konferensbidrag (refereegranskat)abstract
- Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.
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- Song, Yuxin, 1981, et al.
(författare)
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Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates
- 2009
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:12, s. 123531-
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the effects of doping and grading slope on the surface and structure of linearly alloy graded InGaAs buffers. It is found that the Be doping can improve material properties, resulting in smaller surface roughness and a lower threading dislocation density, while the Si doping has an opposite effect. The effect is strongly dependent on the grading slope. A moderate In grading slope is preferable for the strain relaxation and the minimization of the negative effect of Si doping. Physical mechanisms are proposed to explain the experimental observations. Since doping is essential for many types of optoelectronic devices, these results are valuable for improving the material properties and performance of metamorphic devices.
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