Sökning: WFRF:(Lai Zonghe 1948)
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Comparison of optic...
Comparison of optical and structural quality of GaIn(N) As analog and digital quantum wells grown by molecular beam epitaxy
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- Zhao Ternehäll, Huan, 1982 (författare)
- Chalmers University,Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (författare)
- Chalmers University,Chalmers tekniska högskola,Chalmers University of Technology
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- Zhao, Qingxiang (författare)
- Linköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan
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- Lai, Zonghe, 1948 (författare)
- Chalmers University,Chalmers tekniska högskola,Chalmers University of Technology
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- Sadeghi, Mahdad, 1964 (författare)
- Chalmers University,Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (författare)
- Chalmers University,Chalmers tekniska högskola,Chalmers University of Technology
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- Zhao, Qing Xiang, 1962 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2008-09-29
- 2008
- Engelska.
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:12, s. 125002-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- A set of Ga0.625In0.375(N) As single quantum well (QW) samples with the identical total amounts of Ga and In and QW thicknesses was designed and grown by both the analog and the digital methods using molecular beam epitaxy. The N exposure time in the GaInNAs samples was kept the same. The inter-band gap recombination in the analog and the digital InGaAs QWs appears in a similar transition energy range as a result of In segregation. Temperature-dependent photoluminescence (PL) measurements were performed on the GaInNAs samples. An S-shaped dependence of the transition energy on temperature was observed in the digital GaInNAs QWs but not in the analog GaInNAs QW. Post-growth rapid thermal annealing had remarkably different effects on the PL intensity: an increase for the analog InGaAs QW and for the analog and digital GaInNAs QWs, but a decrease for the digital InGaAs QW with increasing annealing temperature. The GaIn(N) As samples grown by the digital method showed weaker PL intensities and smaller wavelength blue-shifts than the similar samples grown by the analog method. Possible strain relaxation mechanisms are discussed.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
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Zhao Ternehäll, ...
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Wang, Shu Min, 1 ...
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Zhao, Qingxiang
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Lai, Zonghe, 194 ...
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Sadeghi, Mahdad, ...
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Larsson, Anders, ...
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Zhao, Qing Xiang ...
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Linköpings universitet
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Chalmers tekniska högskola