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- Tångring, Ivar, 1978, et al.
(författare)
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1.58 µm InGaAs quantum well laser on GaAs
- 2007
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Ingår i: Applied Physics Letters. ; 91, s. 221101-
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 µm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 µm GaAs-based lasers.
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2. |
- Wang, Shu Min, 1963, et al.
(författare)
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Metamorphic InGaAs Materials and Telecom Lasers
- 2009
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Ingår i: International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper).
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Konferensbidrag (refereegranskat)
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