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Sökning: WFRF:(Lai Zonghe 1948) > (2010-2014) > Dochev Dimitar Milkov 1981

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1.
  • Dochev, Dimitar Milkov, 1981, et al. (författare)
  • Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications
  • 2011
  • Ingår i: Superconductor Science and Technology. - : IOP Publishing. - 0953-2048 .- 1361-6668. ; 24:3, s. 035016 (6pp)-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivitymeasurements of the films have shown that the superconducting transition onset temperature (TC) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature TC = 11.3 K and critical current density of about 2.5 MA cm−2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.
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2.
  • Dochev, Dimitar Milkov, 1981, et al. (författare)
  • The influence of aging and annealing on the properties of Nb/Al-AlOx/Nb tunnel junctions
  • 2010
  • Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 234:4
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents results of our studies on aging and annealing properties of Nb/Al-AlOx/Nb junctions. We performed a long room temperature aging with subsequent annealing at different temperatures up to 250°C. A distinct change of the junctions' normal-state resistance has been observed. Aging at room temperature results in a slight decrease of the normal-state resistance combined with improved junction quality, characterised by a better subgap-to-normal resistance ratio. Annealing at moderate temperatures in air increases the normal-state resistance and leads to improvement of the junction quality followed by degradation at higher annealing temperatures. The increase in the junction quality after long-term aging at room temperature is attributed to relaxation of the internal junction structure and interfaces, thus, resulting in a lower density of interface traps. The deterioration at higher annealing temperatures could be a consequence of diffusion processes at the Al/Nb interface. We observe a sufficiently clear difference between the behaviour of preliminary aged and newly fabricated junctions after annealing: for the aged high-quality junction, the degradation was negligible up to temperatures of 200°C, while non-aged junctions show a much faster and abrupt degradation at lower annealing temperatures.
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