InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

• High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

NATURVETENSKAP  -- Data- och informationsvetenskap (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences (hsv//eng)

Keyword

millimetre wave integrated circuits

power combiners

transmission

lines

millimetre-wave broadband waveguide based power combiner

lossy

waveguide-based power combiner

lossy planar transmission lines

reflection coefficients

millimetre-wave broadband high solid-state

power

frequency 26

5 GHz to 40 GHz

Quantum dots

Publication and Content Type

art (subject category)

ref (subject category)