| 1. |
- Koettgen, Anna, et al.
(författare)
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Genome-wide association analyses identify 18 new loci associated with serum urate concentrations
- 2013
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 45:2, s. 145-154
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Tidskriftsartikel (refereegranskat)abstract
- Elevated serum urate concentrations can cause gout, a prevalent and painful inflammatory arthritis. By combining data from >140,000 individuals of European ancestry within the Global Urate Genetics Consortium (GUGC), we identified and replicated 28 genome-wide significant loci in association with serum urate concentrations (18 new regions in or near TRIM46, INHBB, SEMBT1, TMEM171, VEGFA, BAZ1B, PRKAG2, STC1, HNF4G, A1CF, ATXN2, UBE2Q2, IGF1R, NFAT5, MAF, HLF, ACVR1B-ACVRL1 and B3GNT4). Associations for many of the loci were of similar magnitude in individuals of non-European ancestry. We further characterized these loci for associations with gout, transcript expression and the fractional excretion of urate. Network analyses implicate the inhibins-activins signaling pathways and glucose metabolism in systemic urate control. New candidate genes for serum urate concentration highlight the importance of metabolic control of urate production and excretion, which may have implications for the treatment and prevention of gout.
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| 2. |
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| 3. |
- Duo, Xinzhong, et al.
(författare)
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A concurrent multi-band LNA for multi-standard radios
- 2005
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Ingår i: 2005 IEEE International Symposium On Circuits And Systems (ISCAS), Conference Proceedings. - : IEEE. - 0780388348 ; , s. 3982-3985
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Konferensbidrag (refereegranskat)abstract
- A source-degenerated cascade LNA, which works at 2.4GHz and 5.8GHz simultaneously, is designed for Bluetooth and IEEE wireless LAN 802.11 a/b/g receivers. In this design, 0.15 mu m GaAs PHEMT technology and embedded passives in MCM-D substrate are implemented. At 2.4GHz and 5.8GHz, this LNA provides 12.2dB and 15.3dB gain, respectively. Noise figures of the LNA are 0.53dB and 1.43dB, respectively. Good input matching and output matching are also achieved-S11 and S22 at both frequencies are less than -10dB.
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| 4. |
- Duo, Xinzhong, et al.
(författare)
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A DC-13GHz LNA for UWB RFID applications
- 2004
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Ingår i: 22ND NORCHIP CONFERENCE, PROCEEDINGS. - 0780385101 ; , s. 241-244
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present a 4-stage traveling wave lownoise amplifier for UWB RFID (ultra-wideband radiofrequency identification). This LNA covers a frequencyrange of DC - 13 CHz. The circuit is implemented with0.I5pm GaAs PHEMT chips embedded in flexible LCP(liquid crystal polymer) substrate. In the frequency range,the gain of the LNA is better than IO dB, fluctuation of thegain is less than 3dB, its noise figure is less than 4dB, SI 1and S22 are around -10 dB.
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| 5. |
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| 6. |
- Duo, Xinzhong, et al.
(författare)
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Analysis of lossy packaging parasitics for common emitter LNA in system-on-package
- 2004
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Ingår i: ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING. - NEW YORK : IEEE. - 0780386671 ; , s. 75-78
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Konferensbidrag (refereegranskat)abstract
- Advances of VLSI and packaging technologies enable condensed integration of an RF system in a single module, known as SoC and SoP. In order to find a better solution between SoC and SoP for RF systems and their sub-systems, it is needed to predict and estimate performance of each solution. In this paper, analytical equations for noise figure and gain of inductively degenerated common-emitter low-noise amplifiers in SoP/SoC are deduced as functions of passives and packaging parasitics. They hence enable designers to evaluate overall performance of each solution quantitatively. As well, influence of lossy packaging parasitics on LNA is also analyzed.
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| 7. |
- Duo, Xinzhong, et al.
(författare)
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Broadband CMOS LNAs for IR-UWB receiver
- 2005
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Ingår i: Norchip 2005, Proceedings. - New York : IEEE. - 1424400643 ; , s. 273-276
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Konferensbidrag (refereegranskat)abstract
- Two single-ended wideband LNAs for Ultrawide-band receiver have been designed and implemented in 0.18 mu m CMOS technology. The first one, a feed-back LNA, is a two-stage amplifier with a improved feedback loop, which provides high gain and enables the input port to match with 500 in a wide frequency range from 500MHz to 8GHz. The second one, an LC low-pass-filter matched LNA, employs a third-order low pass filter in the input port to match a frequency range from 3GHz to 8GHz. In both of the LNAs, the input stage is a common source amplifier. Inductive shunt peaking is used for maximizing the bandwidth and flatting the gain. In the feed-back LNA, measurements show that the maximum gain is 11.5dB, the 3-dB; bandwidth is from 500MHz to 7GHz, IIP3 is -2.2dBm at 4GHz, the minimum noise figure is around 5.7dB, S11 is less than 8.2dB, and the power consumption is 14mW. In the LC filter matched LNA, the 3-dB bandwidth is from 3GHz to 7.3GHz. The maximum gain is 9.6dB, IIP3 is 0dBm at 4 GHz, the minimum noise figure is 7.6dB, S11 is less than -13.4dB and the power consumption is 23mW.
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| 8. |
- Duo, Xinzhong, et al.
(författare)
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Chip-package co-design of common emitter LNA in system-on-package with on-chip versus off-chip passive component analysis
- 2003
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Ingår i: ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING. - NEW YORK : IEEE. ; , s. 55-58
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present common emitter LNAs (low noise amplifiers) in system-on-package for 5GHz WLAN application. Innovation of this module is that it is chip-package co-designed and co-simulated with performance trade-offs for on-chip versus off-chip passive component integration. It thus provides an optimal total solution for embedded RF electronics in system-level integration. Analytical equations for key performance parameters, noise figure and gain, of these LNAs are developed as functions of quality factors of passive components and the package parasitics. They hence provide designers a quantitative trade-off for on-chip versus off-chip passive components integration in SoP design. The final module is composed of on-chip active components in 0.5mum SiGe BiCMOS technology and off-chip passive components integrated in MCM-D substrate. Significant improvement in performance is found in these co-designed LNAs than those in single-chip LNAs.
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| 9. |
- Duo, Xinzhong, et al.
(författare)
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Design and implementation of a 5GHz RF receiver front-end in LCP based system-on-package module with embedded chip technology
- 2003
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Ingår i: ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING. - 0780381289 ; , s. 51-54
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present a receiver front-end for 5 GHz wireless LAN in novel LCP (liquid crystal polymer) based system-on-package module. The module is based on embedded chip technologies for system-on-package, which eliminates the constraints of off-chip pad drive capability and hence improves electrical performance. Furthermore, the novel LCP material shows excellent RF and microwave performance. The quality factors of key passive components such as inductors integrated in LCP substrate with thin film technologies is as high as 60. The insertion loss of the bandpass filter is 3dB. The conversion gain of the receiver front-end is 20 dB and occupies 8.7mm by 3.6mm area.
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| 10. |
- Duo, Xinzhong, et al.
(författare)
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Modeling and simulation of spiral inductors in wafer level packaged RF/wireless chips
- 2003
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Ingår i: Analog Integrated Circuits and Signal Processing. - GZ DORDRECHT : KLUWER ACADEMIC PUBL. - 0925-1030 .- 1573-1979. ; 34:1, s. 39-47
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, embedded rectangular spiral inductors on Wafer-Level Packaged (WLP) RF/wireless chips were studied with 3D (three-dimensional) EM (electromagnetic) simulations. The performance of spiral inductors fabricated with various geometrical and technological parameters was analyzed. It is shown that Q (the quality factor) and f(res) (the self-resonance frequency) could be improved by using the thick insulator layer and thick/wide metal line, which are fabricated by WLP technology. The value of Q could be over 60 at 20 GHz for such embedded components, attesting a significant improvement compared to the conventional on-chip counterparts in CMOS. Through this study, optimal structures for such components are identified and guidelines for design and fabrications are derived. Finally, a method to estimate the inductance of rectangle spiral inductors is developed. It is useful to determine the approximate structure of an inductor quickly before detailed 3D EM simulation, which may cost a long time.
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