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Sökning: WFRF:(Lind L) > Teknik

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1.
  • Wang, C. H., et al. (författare)
  • High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
  • 2014
  • Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 4:4
  • Tidskriftsartikel (refereegranskat)abstract
    • Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (D-it). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (D-it) profiles show D-it minima of 6.1 x 10(12/)6.5 x 10(12) and 6.6 x 10(12)/7.3 x 10(12) cm(-2) eV(-1) for Al2O3 and HfO2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (D-it) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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2.
  • Lind, C. M., et al. (författare)
  • Effectiveness and usability of real-time vibrotactile feedback training to reduce postural exposure in real manual sorting work
  • 2023
  • Ingår i: Ergonomics. - : Informa UK Limited. - 0014-0139 .- 1366-5847. ; 66:2, s. 198-216
  • Tidskriftsartikel (refereegranskat)abstract
    • Vibrotactile feedback training may be used as a complementary strategy to reduce time in demanding postures in manual handling. This study evaluated the short- and medium-term effects of concurrent posture-correction vibrotactile feedback training on trunk inclination exposure in real manual sorting work. Fifteen warehouse workers completed the training and the follow-up sessions. Trunk inclination angles were recorded using the ambulatory Smart Workwear System. Questionnaires were used for assessing system usability, perceived physical exertion, and work ability. The results showed reduced time in trunk inclination >30°, >45°, and >60°, and reductions in the 90th, 95th, and 99th percentile trunk inclination angles, when receiving feedback and immediately after feedback withdrawal. No significant reduction was retained after one and three weeks. The wearer's comfort was scored high, and the feedback did not increase the perceived cognitive demands. No significant effects attributed to changed trunk inclination exposure were observed for perceived physical exertion or work ability. The training program has the potential of contributing to reduced trunk inclination exposure in the short term. Future studies are needed to evaluate if improvements in the feedback training can transfer the short-term results to retained median- and long-term effects. Practitioner summary: A two-day training program with concurrent posture-correction vibrotactile feedback can contribute to reduced exposure of trunk inclination in real manual sorting work in the short term. More research is needed on how to design the feedback training programs in order to be effective in the long term. 
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3.
  • Memisevic, E., et al. (författare)
  • Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
  • 2017
  • Ingår i: 2016 IEEE International Electron Devices Meeting, IEDM 2016. - 9781509039012 ; , s. 1-19
  • Konferensbidrag (refereegranskat)abstract
    • We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.
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5.
  • Isaksson, Simon, 1988, et al. (författare)
  • Protein-Containing Lipid Bilayers Intercalated with Size-Matched Mesoporous Silica Thin Films
  • 2017
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 17:1, s. 476-485
  • Tidskriftsartikel (refereegranskat)abstract
    • Proteins are key components in a multitude of biological processes, of which the functions carried out by transmembrane (membrane-spanning) proteins are especially demanding for investigations. This is because this class of protein needs to be incorporated into a lipid bilayer representing its native environment, and in addition, many experimental conditions also require a solid support for stabilization and analytical purposes. The solid support substrate may, however, limit the protein functionality due to protein material interactions and a lack of physical space. We have in this work tailored the pore size and pore ordering of a mesoporous silica thin film to match the native cell-membrane arrangement of the transmembrane protein human aquaporin 4 (hAQP4). Using neutron reflectivity (NR), we provide evidence of how substrate pores host the bulky water-soluble domain of hAQP4, which is shown to extend 7.2 nm into the pores of the substrate. Complementary surface analytical tools, including quartz crystal microbalance with dissipation monitoring (QCM-D) and fluorescence microscopy, revealed successful protein-containing supported lipid bilayer (pSLB) formation on mesoporous silica substrates, whereas pSLB formation was hampered on nonporous silica. Additionally, electron microscopy (TEM and SEM), light scattering (DLS and stopped-flow), and small-angle X-ray scattering (SAXS) were employed to provide a comprehensive characterization of this novel hybrid organic-inorganic interface, the tailoring of which is likely to be generally applicable to improve the function and stability of a broad range of membrane proteins containing water-soluble domains.
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7.
  • Sodergren, L., et al. (författare)
  • Cryogenic Characteristics of InGaAs MOSFET
  • 2023
  • Ingår i: IEEE Transactions on Electron Devices. - 0018-9383. ; 70:3, s. 1226-1230
  • Tidskriftsartikel (refereegranskat)abstract
    • We present an investigation of the temperature dependence of the current characteristic of a long-channel InGaAs quantum well MOSFET. A model is developed, which includes the effects of band tail states, electron concentration-dependent mobility, and interface trap density to accurately explain the measured data over all modes of operation. The increased effect of remote impurity scattering is associated with mobility degradation in the subthreshold region. The device has been characterized down to 13 K, with a minimum inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility of 6700 cm /V s and with values of 75 mV/dec and 3000 cm /V s at room temperature.
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10.
  • Zota, C. B., et al. (författare)
  • High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
  • 2016
  • Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 52:22, s. 1869-1871
  • Tidskriftsartikel (refereegranskat)abstract
    • Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.
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