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- Roll, Guntrade, et al.
(författare)
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RF and DC Analysis of Stressed InGaAs MOSFETs
- 2014
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 35:2, s. 181-183
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies.
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3. |
- Bengtsson, Lars, et al.
(författare)
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Avveckling eller utveckling?
- 2005
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Ingår i: Alternativ till outsourcing. - Malmö : Liber. - 9147076623 ; , s. 148-161
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Bokkapitel (populärvet., debatt m.m.)
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- Bengtsson, Lars, et al.
(författare)
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Introduktion
- 2005
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Ingår i: Alternativ till outsourcing. - Malmö : Liber. - 9147076623 ; , s. 7-16
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Bokkapitel (populärvet., debatt m.m.)
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