| 1. |
- Krishnaraja, Abinaya, et al.
(författare)
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Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
- 2020
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 2:9, s. 2882-2887
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Tidskriftsartikel (refereegranskat)abstract
- Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications.
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| 2. |
- Egard, Mikael, et al.
(författare)
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Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
- 2013
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Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
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| 3. |
- Egard, Mikael, et al.
(författare)
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:3, s. 369-371
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.
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| 4. |
- Egard, Mikael, et al.
(författare)
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High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011
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Ingår i: 2011 IEEE International Electron Devices Meeting (IEDM). - 9781457705052
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Konferensbidrag (refereegranskat)abstract
- In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
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| 5. |
- Egard, Mikael, et al.
(författare)
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In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:7, s. 970-972
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.
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| 6. |
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| 7. |
- Fröberg, Linus, et al.
(författare)
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Vertical InAs nanowire wrap-gate FETs
- 2006
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Ingår i: Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006).
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Konferensbidrag (refereegranskat)
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| 8. |
- Jacobsson, Josefin A., et al.
(författare)
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Detailed Analysis of Variants in FTO in Association with Body Composition in a Cohort of 70-Year-Olds Suggests a Weakened Effect among Elderly
- 2011
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Ingår i: PLOS ONE. - : Public Library of Science (PLoS). - 1932-6203. ; 6:5, s. e20158-
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Tidskriftsartikel (refereegranskat)abstract
- Background: The rs9939609 single-nucleotide polymorphism (SNP) in the fat mass and obesity (FTO) gene has previously been associated with higher BMI levels in children and young adults. In contrast, this association was not found in elderly men. BMI is a measure of overweight in relation to the individuals' height, but offers no insight into the regional body fat composition or distribution. Objective: To examine whether the FTO gene is associated with overweight and body composition-related phenotypes rather than BMI, we measured waist circumference, total fat mass, trunk fat mass, leg fat mass, visceral and subcutaneous adipose tissue, and daily energy intake in 985 humans (493 women) at the age of 70 years. In total, 733 SNPs located in the FTO gene were genotyped in order to examine whether rs9939609 alone or the other SNPs, or their combinations, are linked to obesity-related measures in elderly humans. Design: Cross-sectional analysis of the Prospective Investigation of the Vasculature in Uppsala Seniors (PIVUS) cohort. Results: Neither a single SNP, such as rs9939609, nor a SNP combination was significantly linked to overweight, body composition-related measures, or daily energy intake in elderly humans. Of note, these observations hold both among men and women. Conclusions: Due to the diversity of measurements included in the study, our findings strengthen the view that the effect of FTO on body composition appears to be less profound in later life compared to younger ages and that this is seemingly independent of gender.
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| 9. |
- Ohlsson, Lars, et al.
(författare)
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Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
- 2010
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Ingår i: [Host publication title missing]. ; , s. 253-256
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Konferensbidrag (refereegranskat)abstract
- Methods to achieve admittance matching of rectangular dielectric resonator antennas intended for 60~GHz impulse radio are reported. The motivation is to find a suitable antenna that may be integrated in the V-band gated tunnel diode wavelet generator, replacing its tank circuit and forming a low complexity transmitter. Probed one- and two-port scattering parameter measurements have been performed to characterise the fabricated antennas. Changing the feed structure from a tapered dipole to an offset fed and tapered slot, a change from capacitive to inductive characteristics is observed, and the matching to the gated tunnel diode is improved. Deembedded admittance resonance frequencies of fabricated antennas were found at 53.6 and 52.2~GHz for dipole and slot fed antennas, respectively. Characterising the transmission link between dipole fed antennas, a maximum antenna gain of 10.5~dBi and a 3~dB power bandwidth of 1.5~GHz were found at 53.3~GHz.
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| 10. |
- Ohlsson, Lars, et al.
(författare)
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First InGaAs lateral nanowire MOSFET RF noise measurements and model
- 2017
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Ingår i: 75th Annual Device Research Conference, DRC 2017. - 9781509063277
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Konferensbidrag (refereegranskat)abstract
- The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.
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