| 1. |
- Zhan, Zhaoyao, 1983, et al.
(författare)
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Pore-free bubbling delamination of chemical vapor deposited graphene from copper foils
- 2015
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Ingår i: Journal of Materials Chemistry C. - : Royal Society of Chemistry (RSC). - 2050-7526 .- 2050-7534. ; 3:33, s. 8634-8641
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Tidskriftsartikel (refereegranskat)abstract
- The electrolytic bubbling-assisted transfer of graphene from metal catalysts in chemical vapor deposition provides a high efficiency, low cost and environmental benign alternative to the traditional chemical etching method. Despite its high potential, the yield of bubbling delamination is yet low, mainly due to the induced pores in the graphene after the transfer. It is found that water and protons transported through the poly(methyl methacrylate) (PMMA) supporting layer play a critical role in pore formation. Once water and protons reach the PMMA-graphene interface before delamination is finished, the protons permeate the graphene and form trapped hydrogen bubbles between the graphene and the metal. The built-up gas pressure inside the bubbles is high enough to crack the PMMA/graphene sheet, thereby creating pores in the graphene. An optimized PMMA layer not only reduces trapped hydrogen bubble generation, but it is also mechanically stronger preventing cracking. This contributes significantly to the pore-free electrolytic bubbling-assisted delamination of graphene.
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| 2. |
- Cagliani, A., et al.
(författare)
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Defect/oxygen assisted direct write technique for nanopatterning graphene
- 2015
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:14, s. 6271-6277
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Tidskriftsartikel (refereegranskat)abstract
- High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.
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| 3. |
- Fu, Yifeng, 1984, et al.
(författare)
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Templated Growth of Covalently Bonded Three-Dimensional Carbon Nanotube Networks Originated from Graphene
- 2012
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 24:12, s. 1576-1581
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Tidskriftsartikel (refereegranskat)abstract
- A template-assisted method that enables the growth of covalently bonded three-dimensional carbon nanotubes (CNTs) originating from graphene at a large scale is demonstrated. Atomic force microscopy-based mechanical tests show that the covalently bonded CNT structure can effectively distribute external loading throughout the network to improve the mechanical strength of the material.
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| 4. |
- Hong, Kuo Bin, et al.
(författare)
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Monolithic high-index contrast grating mirror for a GaN-based vertical-cavity surface-emitting laser
- 2021
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Ingår i: Photonics Research. - 2327-9125. ; 9:11, s. 2214-2221
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, a pulsed electrically pumped GaN-based vertical-cavity surface-emitting laser (VCSEL) with one dielectric distributed Bragg reflector and one n-GaN monolithic high-index contrast grating (MHCG) mirror was demonstrated at room temperature. The reflectance of the n-GaN MHCG and cavity mode behaviors of the VCSEL with MHCG for varying n-GaN thickness, MHCG pattern diameter, and current aperture size were numerically investigated. Measured characteristics of the fabricated device showed that the lasing action started at an injection current of 10.2 mA, corresponding to a current density of about 15.1 kA=cm2. Above threshold, the measured slope efficiency was 6.2 × 10−3 W∕A, and the output power was 0.13 mW at 30 mA. Moreover, the measured lasing peak occurring at 403.4 nm and the longitudinal mode spacing of 5.6 nm were in good agreement with simulations. The incorporation of an n-GaN MHCG mirror not only greatly simplified the fabrication but also substantially improved the lasing characteristics in comparison to the previous work applying TiO2 HCG mirrors.
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| 5. |
- Lindahl, Niklas, 1981, et al.
(författare)
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Determination of the Bending Rigidity of Graphene via Electrostatic Actuation of Buckled Membranes
- 2012
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 12:7, s. 3526-3531
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Tidskriftsartikel (refereegranskat)abstract
- Classical continuum mechanics is used extensively to predict the properties of nanoscale materials such as graphene. The bending rigidity, kappa, is an important parameter that is used, for example, to predict the performance of graphene nanoelectromechanical devices and also ripple formation. Despite its importance, there is a large spread in the theoretical predictions of kappa for few-layer graphene. We have used the snap-through behavior of convex buckled graphene membranes under the application of electrostatic pressure to determine experimentally values of kappa for double-layer graphene membranes. We demonstrate how to prepare convex-buckled suspended graphene ribbons and fully clamped suspended membranes and show how the determination of the curvature of the membranes and the critical snap-through voltage, using AFM, allows us to extract kappa. The bending rigidity of bilayer graphene membranes under ambient conditions was determined to be 35.5(-15.0)(+20.0) eV. Monolayers are shown to have significantly lower kappa than bilayers.
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| 6. |
- Lindvall, Niclas, 1985, et al.
(författare)
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Cleaning graphene using atomic force microscope
- 2012
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 111:6, s. Article Number: 064904-
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Tidskriftsartikel (refereegranskat)abstract
- We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility.
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| 7. |
- Lindvall, Niclas, 1985
(författare)
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Fabrication and characterization of graphene-superconductor devices
- 2015
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Graphene is the first single-atom-thick two-dimensional material and exhibits a large set of interesting properties. This thesis consists of two parts. The first regards the growth of large-area graphene using chemical vapor deposition (CVD). Graphene is grown using CVD on copper catalyst showing high quality with charge carrier mobility exceeding 3000 cm2/Vs.Wet chemical etching is used to transfer graphene to insulating substrates. Cu is removed using either diluted HNO3 or diluted HCl with a small amount of added H2O2. To allow for faster transfer and avoid consuming copper, a hydrogen-bubbling method is developed to delaminate graphene from Cu. Graphene transferred this way shows properties similar to those of graphene transferred using wet etching.To avoid transfer-related issues, graphene is grown non-catalytically directly on insulating substrates such as SiO2, Al2O3, and Si3N4. The grain size is only ~10 nm due to the lack of catalytic activity during growth. Such graphene shows inferior electronic properties with mobility in the order of ~tens of cm2/Vs. Despite that, sheet resistance around kΩ, the possibility to grow several layer thick films, and optical properties similar to those of pristine graphene make it an interesting material.A method for cleaning graphene mechanically using atomic force microscopy (AFM) is developed. By appropriate choice of the applied force, atomically smooth (roughness
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| 8. |
- Lindvall, Niclas, 1985, et al.
(författare)
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Measurements of weak localization of graphene in inhomogeneous magnetic fields
- 2015
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Ingår i: JETP Letters. - : Pleiades Publishing Ltd. - 1090-6487 .- 0021-3640. ; 102:6, s. 367-371
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Tidskriftsartikel (refereegranskat)abstract
- Weak localization in graphene is studied in inhomogeneous magnetic fields. To generate the inhomogeneous field, a thin film of type-II superconducting niobium is put in close proximity to graphene. A deviation from the ordinary quadratic weak localization behavior is observed at low fields. We attribute this to the inhomogeneous field caused by vortices in the superconductor. The deviation, which depends on the carrier concentration in graphene, can be tuned by the gate voltage. In addition, collective vortex motion, known as vortex avalanches, is observed through magnetoresistance measurements of graphene.
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| 9. |
- Lindvall, Niclas, 1985
(författare)
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Towards graphene-based devices: Fabrication and characterization
- 2012
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Graphene is a new material with a large set of impressive properties, interesting both for fundamental studies and applications. Reliable synthesis of large-scale, high-quality graphene is key to its future success. This thesis is focused on the development of such fabrication techniques and experimental studies on three different graphene-based devices.The highest quality graphene is produced by mechanical exfoliation of graphite. While this technique is not scalable, it provides high quality graphene for scientific purposes and proof of principle devices. Catalytic chemical vapor deposition of graphene on copper is the most promising scalable method for graphene synthesis. Techniques for high temperature growth of graphene from methane as a precursor gas on high-purity copper foils are developed. Also, techniques for transferring the as‑grown graphene to insulating substrates are presented. Large-scale graphene with high uniformity and a mobility ~3000 cm2/Vs at room temperature is obtained.The transfer process needed for catalytically grown graphene on copper introduces issues with process reliability and future integration in semiconductor manufacturing. A non-catalytic chemical vapor deposition technique is shown to give uniform large-area graphene directly on insulating substrates like SiO2 and Si3N4, avoiding transfer. Raman spectroscopy, transmission electron microscopy, and transport measurements show that graphene grown this way is nanocrystalline and its electronic properties are inferior to those of catalytically grown graphene.Contamination and unintentional doping are difficult to avoid in graphene processing. A mechanical cleaning technique using an atomic force microscope is shown to efficiently remove contaminants and improve the electronic properties of graphene. The technique is easy and can be applied to substrates that cannot sustain standard graphene cleaning procedures.Graphene devices are realized on ferroelectric barium strontium titanate. The strong field effect in graphene is utilized as a read-out of the ferroelectric state, thus realizing a hybrid graphene-ferroelectric memory device.A graphene-based cold-electron bolometer is fabricated and characterized at cryogenic temperature. The low volume of graphene makes it an interesting absorber material for high-sensitivity bolometers.The Aharonov-Bohm effect is studied in graphene rings having metallic mirrors. The mirrors confine electrons to the Aharonov-Bohm ring, improving the visibility of higher-order Aharonov-Bohm oscillations.
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| 10. |
- Lindvall, Niclas, 1985, et al.
(författare)
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Towards transfer-free fabrication of graphene NEMS grown by chemical vapour deposition
- 2012
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Ingår i: Micro and Nano Letters. - : Institution of Engineering and Technology (IET). - 1750-0443. ; 7:8, s. 749-752
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Tidskriftsartikel (refereegranskat)abstract
- Graphene, an atomic monolayer of sp(2)-hybridised carbon atoms, is a promising material for future NEMS based on its remarkable electronic and mechanical properties. Through the rapid progress of chemical vapour deposition of large-scale, high-quality graphene, these applications seem to be close to reality. However, issues related to the graphene transfer process limit the reproducibility of such devices. In this Letter, the authors present two different approaches for fabricating suspended graphene devices without any transfer step, using both catalytically and non-catalytically grown graphene. The authors achieve high reproducibility in manufacturing flat and uniform suspended graphene beams. While good mechanical properties are observed, the electrical performance is still poor, requiring improvements.
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