SwePub
Tyck till om SwePub Sök här!
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Liu Johan 1960) srt2:(2005-2009);pers:(Jeppson Kjell 1947)"

Sökning: WFRF:(Liu Johan 1960) > (2005-2009) > Jeppson Kjell 1947

  • Resultat 1-2 av 2
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  • Wang, Teng, 1983, et al. (författare)
  • Through silicon vias filled with planarized carbon nanotube bundles
  • 2009
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:48
  • Tidskriftsartikel (refereegranskat)abstract
    • The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planarized by a combined lapping and polishing process to achieve both a high removal rate and a fine surface finish. Electrical tests of the CNT TSVs have been performed and their electrical resistance was found to be in the few hundred ohms range. The reasons for the high electrical resistance have been discussed and possible methods to decrease the electrical resistance have been proposed.
  •  
2.
  • Jeppson, Kjell, 1947, et al. (författare)
  • 3D chip stacking using planarized carbon nanotubes as through-silicon-vias
  • 2009
  • Ingår i: Swedish System on Chip Conference.
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Future miniaturization of advanced electronic systems will require 3D chip-to-chip stacking of high performance processor chips. Such systems raise a number of questions concerning power distribution and thermal management issues. Efficient through-silicon-via (TSV) technology and new thermal interface materials will be required for such systems to be successful. Carbon nanotubes (CNT) have been suggested as a candidate material with good mechanical properties, and good thermal and electrical conductivities superior to those of copper TSVs. In this paper we will describe our efforts on producing through-silicon-vias based on carbon nanotube bundles grown from the bottom of 150 m deep silicon vias with 50*50 µm openings. The resistances of such CNT vias have been electrically measured and found to be about 2.0 kΩ, a result very close to previously reported values. However, these values are orders of magnitude too high for practical use and not at all close to values reported from measurements on short carbon nanotubes. New processes are suggested too improve growth of long CNTs.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-2 av 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy