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Sökning: WFRF:(Liu L.) > Högskolan i Halmstad

  • Resultat 1-6 av 6
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1.
  • 2019
  • Tidskriftsartikel (refereegranskat)
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2.
  • Bäckhed, Fredrik, 1973, et al. (författare)
  • Dynamics and Stabilization of the Human Gut Microbiome during the First Year of Life
  • 2015
  • Ingår i: Cell Host & Microbe. - Cambridge : Elsevier BV. - 1931-3128 .- 1934-6069. ; 17:5, s. 690-703
  • Tidskriftsartikel (refereegranskat)abstract
    • The gut microbiota is central to human health, but its establishment in early life has not been quantitatively and functionally examined. Applying metagenomic analysis on fecal samples from a large cohort of Swedish infants and their mothers, we characterized the gut microbiome during the first year of life and assessed the impact of mode of delivery and feeding on its establishment. In contrast to vaginally delivered infants, the gut microbiota of infants delivered by C-section showed significantly less resemblance to their mothers. Nutrition had a major impact on early microbiota composition and function, with cessation of breast-feeding, rather than introduction of solid food, being required for maturation into an adult-like microbiota. Microbiota composition and ecological network had distinctive features at each sampled stage, in accordance with functional maturation of the microbiome. Our findings establish a framework for understanding the interplay between the gut microbiome and the human body in early life.
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3.
  • Hagström, A. L., et al. (författare)
  • An iterative approach to determine the refractive index of 3D printed 60GHz PLA lenses
  • 2018
  • Ingår i: Proceedings of the 14th Loughborough Antennas and Propagation Conference (LAPC 2018). - Piscataway, N.J. : IEEE. - 9781785619694
  • Konferensbidrag (refereegranskat)abstract
    • This paper describes an iterative approach to determine quasi-optical properties of standard 3D printer filament material to, in an inexpensive and fast way, construct focusing lenses for millimetre wave systems. Results from three lenses with different focal lengths are shown and discussed. The real part of the permittivity at 60GHz for polylactic acid (PLA) is in this paper determined to be εr=2.74. © 2018 Institution of Engineering and Technology. All rights reserved.
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4.
  • Liu, Ruisheng, et al. (författare)
  • Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
  • 2007
  • Ingår i: Applied Physics Letters. - New York : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 90:12, s. 123111-
  • Tidskriftsartikel (refereegranskat)abstract
    • The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island.
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5.
  • Liu, Ruisheng, et al. (författare)
  • Probing spin accumulation in Ni/Au/Ni single-electron transistors with efficient spin injection and detection electrodes
  • 2007
  • Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 7:1, s. 81-85
  • Tidskriftsartikel (refereegranskat)abstract
    • We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au disks, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain, and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. By use of an atomic force microscope with specially designed software, a single nonmagnetic Au nanodisk is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real time while the Au disk is manipulated step-by-step with angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disk. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few nanoseconds on the spin-relaxation time for electrons in the Au disk. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the single-electron transistors. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum tunneling magnetoresistance of 10%, from which we deduced a spin polarization of about 22% in the Ni electrodes. © 2007 American Chemical Society.
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6.
  • Liu, Ruisheng, et al. (författare)
  • Tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions
  • 2008
  • Ingår i: Nano letters (Print). - Washington : American Chemical Society. - 1530-6984 .- 1530-6992. ; 8:3, s. 848-852
  • Tidskriftsartikel (refereegranskat)abstract
    • We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.
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