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| 2. |
- Lu, Lu, 1984-, et al.
(författare)
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MEPicides : α,β-Unsaturated Fosmidomycin N-acyl Analogsas inhibitors that selectively target DXR from Plasmodium falciparum, the deadliest causative parasite of human Malaria
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Fosmidomycin and FR-9000098 have been confirmed to show parasiticidal activity against Plasmodium falciparum, targeting DXR involved in the MEP pathway. We designed a construct of PfDXR that has successfully been overexpressed in E. coli BL21(DE3) C43, and purified by IMAC and SEC, with the final yield of 1.2 mg/ 8 L culture. PfDXR was concentrated to 20 mg/ml, and co-crystallized with previously tested inhibitors in the FR-9000098 scaffold in the presence of Mn2+. Three FR-9000098 analogues with double-bonded Ca-Cband/or a phenyl ring with various lengths to N1, showed inhibitory activities with IC50s roughly 50 nM. Three crystals were in triclinic P1space group, with similar dimensions in the unit cell (51Å, 56Å, 86Å, 103°, 103°, 101°). All four complex structures have been crystallographically determined at resolutions in the range 1.86 Å, 2.45 Å, 2.13Å, 2.05 Å. Given the high similarity in structures, the initial phases were determined by rigid body refinement with search model PfDXR-FN3 complex, followed by restrained refinement in refmac5. Subsequently, the ligands and surrounding amino acid residues were manually rebuilt with theqdstools in O. the Ca-Cbbonds of the three ligands were altered from a single to double bond based on the structure of FR9000098. In addition, two ligands were extended at the Cdwith a phenyl group, and with the benzyl group connected by two carbons. N-terminal NADPH binding domains from four complexes undergo minor rigid body movement, and more details of conformational changes in the flap region are discussed.
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| 3. |
- Asgharian, Hossein, et al.
(författare)
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Institutional Quality, Trust and Stock-Market Participation: Learning to Forget
- 2014
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- We explore the relation between institutional quality, trust and stock-market participation. In our theoretical model, agents update their beliefs in a Bayesian manner based on observations on frauds and choose whether to invest in the stock market. The corresponding empirical model shows that institutional quality affects trust and that the part of trust that is explained by institutional quality influences stock-market participation. For immigrants, we consider learning factors, such as education and duration of stay, and we find that the impact of the institutional quality of the country of residence, relative to that of the home country, tends to increase with education.
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| 7. |
- Engberg, David L. J., et al.
(författare)
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Solid Solution and Segregation Effects in Arc-Deposited Ti1-xSixN Thin Films Resolved on the nanometer scale by 15N Isotopic Substitution in AtomP robe Tomography
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Nanostructured TiSiN is an important material in wear--‐resistant coatings for extending the lifetime of cutting tools. Yet, the understanding regarding the structure, phase composition, and bonding on the detailed nanometer scale, which determines the properties of TiSiN, is lacking. This limits our understanding of the growth phenomena and eventually a larger exploitation of the material. By substituting natN2 with 15N2 during reactive arc deposition of TiSiN thin films, atom probe tomography (APT) gives elemental sensitivity and sub-nanometer resolution, a finer scale than what can be obtained by commonly employed energy dispersive electron spectroscopy in scanning transmission electron microscopy. Using a combination of analytical transmission electron microscopy and APT we show that arc-deposited Ti0.92Si0.0815N and Ti0.81Si0.1915N exhibit Si segregation on the nanometer scale in the alloy films. APT composition maps and proximity histograms from domains with higher than average Ti content show that the TiN domains contain at least ~2 at. % Si for Ti0.92Si0.08N and ~5 at. % Si for Ti0.81Si0.19N, thus confirming the formation of solid solutions. The formation of relatively pure SiNy domains in the Ti0.81Si0.19N films is tied to pockets between microstructured, columnar features in the film. Finer SiNy enrichments seen in APT possibly correspond to tissue layers around TiN crystallites, thus effectively hindering growth of TiN crystallites, causing TiN renucleation and thus explaining the featherlike nanostructure within the columns of these films. For the stoichiometry of the TiN phase, we establish a global under stoichiometry, in accordance with the tendency for SiNy films to have tetrahedral bonding coordination towards a nominal Si3N4 composition.
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| 8. |
- Eriksson, Anders, et al.
(författare)
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Nanocolumnar Epitaxial Ti1-xSixN (0 ≤ x ≤ 0.18) Thin Films Grown by Dual Reactive Magnetron Sputtering on MgO (001), (011), and (111) Substrates
- 2012
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Ti1-xSixNy thin films and multilayers have been grown on single-crystal TiN-templated MgO (001), (011), and (111) substrates kept at 550 °C. Elemental Ti and Si targets were used in UVH reactive dual magnetron sputtering in a mixed Ar/N2 discharge. Composition analysis by time-of-flight energy elastic recoil detection analysis show that the films are close to stoichiometric (0.95 ≤ y ≤ 1.00) with respect to TiN over the wide range of Si concentrations 0 ≤ x ≤ 0.22. High-resolution transmission electron microscopy (TEM) combined with scanning TEM and energy dispersive Xray analysis show that all films grow epitaxially for x ≤ 0.18 and that as much as every fifth Ti atom can be replaced by Si (~10 at.%) in Ti1-xSixN(001). For the (011) and (111)-oriented films, however, only 1-2 at.% Si substitutes for Ti. Instead, Si segregates to form crystalline-to-amorphous SiNz (z ≈ 1) tissue phases, which promote the formation of epitaxial TiN nanocolumns. The nanocolumns have preferred {110} interfaces and {200} top facets and grow several hundreds of nm in length.
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| 9. |
- Fager, Hanna, et al.
(författare)
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Hf-Al-Si-N multilayers deposited by reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target using high-flux, low-energy modulated substrate bias : film growth and properties
- 2014
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Hf1−x−yAlxSiyN (0≤x≤0.14, 0≤y≤0.13) single layers and multilayer films are grown on Si(001) at a substrate temperature Ts=250 °C using ultrahigh vacuum magnetically-unbalanced reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target in a 5%-N2/Ar atmosphere at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf1−x−yAlxSiyN is controlled during growth by varying the ion energy (Ei) of the ions incident at the film surface, keeping the ion-to-metal flux ratio (Ji/JMe) constant at 8. By sequentially switching Ei between 10 and 40 eV, Hf0.77Al0.10Si0.13N/Hf0.78Al0.14Si0.08N multilayers with bilayer periods Λ = 2-20 nm are grown, in which the Si2p bonding state changes from predominantly Si-Si bonds for films grown at Ei = 10 eV, to mainly Si-N bonds at Ei = 40 eV. Multilayer hardness values increase monotonically from 20 GPa with Λ = 20 nm to 27 GPa with Λ = 2 nm, while multilayer fracture toughness increases with increasing Λ. Multilayers with Λ = 10 nm have the optimized property combination of being bothrelatively hard, H∼24 GPa, and fracture tough.
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| 10. |
- Fager, Hanna, et al.
(författare)
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Reactive DC magnetron sputtering of amorphous (Ti0.25B0.75)1−xSixNy thin films from TiB2 and Si targets
- 2014
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- (Ti0.25B0.75)1−xSixNy, 0≤x≤0.89, 0.9≤y≤1.25, thin films were reactively grown on Si(001) substrates by dc magnetron sputtering from compound TiB2 and elemental Si targets. The films can be grown in a fully electron-diffraction amorphous state with x>0.46, as evidenced by XRD and HR-TEM investigations. With x=0, BN form onion-like sheets surrounding TiNnanograins. Substrate temperatures, Ts=100-600 ◦C, has a minor effect of the film structure and properties, due to limited surface diffusion.Ion-assisted growth with substrate bias voltages, Vb, between -50 V and -200 V, favors densification of amorphous structures over nanocrystalline formation, and improves mechanical properties. A maximum hardness value of 26.8±0.7 GPa is found for an amorphous (Ti0.25B0.75)0.39Si0.61N1.15 film grown with substrate temperature Ts=400 °C and substrate bias voltage Vb=-100 V.
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