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- Grishin, Michael A., et al.
(författare)
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Anisotropy of electron structure at InAs(111) surfaces by laser pump-and-probe photoemission spectroscopy
- 2005
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 574:1, s. 89-94
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure and the electron dynamics of the clean InAs(111)A 2 x 2 and the InAs(111)B 1 x 1 surfaces have been studied by laser pump-and-probe photoemission spectroscopy. Normally unpopulated electron states above the valence band maximum (VBM) are filled on the InAs(111)A surface due to the conduction band pinning above the Fermi level (E-F). Accompanied by the downward band banding alignment, a charge accumulation layer is confined to the surface region creating a two dimensional electron gas (2DEG). The decay of the photoexcited carriers above the conduction band minimum (CBM) is originated by bulk states affected by the presence of the surface. No occupied states were found on the InAs(111)B 1 x 1 surface. This fact is suggested to be due to the surface stabilisation by the charge removal from the surface into the bulk. The weak photoemission intensity above the VBM on the (111)B surface is attributed to electron states trapped by surface defects. The fast decay of the photoexcited electron states on the (111)A and the (111)B surfaces was found to be tau(111A) less than or equal to 5 ps and tau(111B) less than or equal to 4ps, respectively. We suggest the diffusion of the hot electrons into the bulk is the decay mechanism. (
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- Grishin, Michael A., et al.
(författare)
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Electron structure and electron dynamics at InSb(111)2×2 semiconductor surface
- 2003
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Ingår i: Applied Physics A. - : Springer Science and Business Media LLC. - 0947-8396 .- 1432-0630. ; 76:3, s. 299-302
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Tidskriftsartikel (refereegranskat)abstract
- The conduction band electronic structure and the electron dynamics of the clean InSb(111)2 x 2 surface have been studied by laser based pump-and-probe photoemission. The results are compared to earlier studies of the InSb(110) surface. It is found that both the energy location and the time dependence of the photoexcited structures are very similar for the two surfaces. This indicates that the dominant part of the photoemission signal in the conduction band region is due to excitations of electrons in the bulk region and that the surface electronic states play a minor role. The fast decay of the excited state, tau similar to 12 ps, indicates that diffusion of hot electrons into the bulk is an important mechanism.
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- Månsson, Martin, et al.
(författare)
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Electronic structure and electron dynamics at the GaSb(001) surface studied by femtosecond pump-and-probe pulsed laser photoemission spectroscopy
- 2006
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5308-5311
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Tidskriftsartikel (refereegranskat)abstract
- Transiently excited electron states at the GaSb(001) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at similar to 250 meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be similar to 11 ps, associated with rapid carrier diffusion.
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- Månsson, Martin, et al.
(författare)
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Ultrafast electron dynamics and recombination at the Ge(111): Sn(root 3 X root 3)R30 degrees surface
- 2008
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Ingår i: Surface Science Letters. - : Elsevier BV. - 0039-6028. ; 602:5, s. L33-L37
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Tidskriftsartikel (refereegranskat)abstract
- We present the first study revealing the electronic structure and electron dynamics of the excited adatom state at the Ge(111): Sn(root 3 x root 3)R30 degrees surface. By the use of time- and angle-resolved photoemission spectroscopy, the normally unoccupied electronic structure of the partly empty Sn adatom can be probed. From the angle-resolved data we conclude that the adatom electrons at the Ge:Sn surface are more delocalized than at the clean Ge(111)c(2 x 8) surface. A unique pump-and-probe technique, based on a pulsed femtosecond laser-system, has also allowed us to study the recombination process of the excited state. We connect the recombination process of the excited electrons to the coherent fluctuations of the Sn adatoms. As a result we present an estimate for the time between each collective and coherent adatom flip Delta t = 9 ps, i.e. an adatom switching frequency nu(SW) approximate to 0.1 THz. We find that our results, contrary to scanning tunneling microscopy measurements [F. Ronci, S. Colonna, S.D. Thorpe, A. Cricenti, G. Le Lay, Phys. Rev. Lett. 95 (2005) 156101], agree very well with values extracted from molecular dynamics simulations found in the literature [J. Avila, A. Mascaraque, E.G. Michel, M.C. Asensio, G. Le Lay, J. Ortega, R. Perez, F. Flores, Phys. Rev. Lett. 82 (1999) 442; D. Farias, W. Kaminski, J. Lobo, J. Ortega, E. Hulpke, R. Perez, F. Flores, E.G. Michel, Phys. Rev. Lett. 91 (2003) 16103].
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