1. |
|
|
2. |
|
|
3. |
- Karlsson, L. S., et al.
(author)
-
Structural Characterisation of GaP <111 > B Nanowires by HRTEM
- 2008
-
In: Microscopy of Semiconducting Material 2007. - 0930-8989. - 9781402086144 ; 120, s. 229-232
-
Conference paper (peer-reviewed)abstract
- GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.
|
|
4. |
|
|
5. |
- Mårtensson, T, et al.
(author)
-
III-V nanowires on Si and nanowire arrays
- 2005
-
In: Book of abstracts: 342nd WE-Heraeus-Seminar Sci and Technol of Inorganic Nanowires, Bad Honnef, Germany (2005).
-
Conference paper (other academic/artistic)
|
|
6. |
|
|