| 1. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint - a tool for realizing nano-bio research
- 2004
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Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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| 2. |
- Kallesoe, Christian, et al.
(författare)
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Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
- 2010
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 28:1, s. 21-26
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections simultaneously on multiple nanowires. They investigate the potential of combining nanostencil deposition of catalyst, epitaxial III-V heterostructure nanowire growth, and selective etching, as a road toward wafer scale integration and engineering of nanowires with existing silicon technology. Nanostencil lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III-V native oxides. Depending on the etching conditions, a variety of gap topologies and tiplike structures are observed, offering postgrowth engineering of material composition and morphology.
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| 3. |
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| 4. |
- Mårtensson, Thomas, et al.
(författare)
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Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth
- 2003
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 14:12, s. 1255-1258
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Tidskriftsartikel (refereegranskat)abstract
- We report on a method of synthesizing arrays of individually seeded nanowires. An electron beam lithography and metal lift-off method was used to pattern InP(111)B substrates with catalysing gold particles. Vertical InP(111)B nanowire arrays were then grown from the gold particles, using metal-organic vapour phase epitaxy. The lithographic nature of the method allows individual control over each nanowire. Possible applications for such deterministic and uniform arrays include producing arrays of nanowire devices, two-dimensional photonic band gap structures and field emission displays, amongst others.
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| 5. |
- Mårtensson, Thomas, et al.
(författare)
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Nanowire arrays - a toolbox for the future
- 2004
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Ingår i: Book of extended abstracts: 8th Intl Conf Nanoscale Sci Technol, Venice, Italy (2004).
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Konferensbidrag (refereegranskat)
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| 6. |
- Mårtensson, Thomas, et al.
(författare)
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Nanowire arrays defined by nanoimprint lithography
- 2004
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 4:4, s. 699-702
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the use of nanoimprint lithography to define arrays of vertical InP nanowires. Each nanowire is individually seeded from a catalyzing gold particle and then grown via vapor-liquid-solid growth in a metal-organic vapor phase epitaxy system. The diameter and position of each nanowire can be controlled to create engineered arrays, demonstrated with a hexagonal photonic crystal pattern. This combination of nanoimprint and self-assembly of nanostructures is attractive for photonics and electronics, as well as in life sciences.
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| 7. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for 0D and 1D physics and applications
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 25:2-3, s. 313-318
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Tidskriftsartikel (refereegranskat)abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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| 8. |
- Seifert, Werner, et al.
(författare)
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Growth of one-dimensional nanostructures in MOVPE
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 272:1-4, s. 211-220
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Tidskriftsartikel (refereegranskat)abstract
- The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.
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