| 1. |
- Johansson, Jonas, et al.
(författare)
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Mass transport model for semiconductor nanowire growth
- 2005
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Ingår i: The Journal of Physical Chemistry Part B. - : American Chemical Society (ACS). - 1520-5207 .- 1520-6106. ; 109:28, s. 13567-13571
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Tidskriftsartikel (refereegranskat)abstract
- We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
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| 2. |
- Johansson, Jonas, et al.
(författare)
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Structural properties of (111)B-oriented III-V nanowires
- 2006
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Ingår i: Nature Materials. - : Springer Science and Business Media LLC. - 1476-4660 .- 1476-1122. ; 5:7, s. 574-580
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Tidskriftsartikel (refereegranskat)abstract
- Controlled growth of nanowires is an important, emerging research field with many applications in, for example, electronics, photonics, and life sciences. Nanowires of zinc blende crystal structure, grown in the left fence111right fenceB direction, which is the favoured direction of growth, usually have a large number of twin-plane defects. Such defects limit the performance of optoelectronic nanowire-based devices. To investigate this defect formation, we examine GaP nanowires grown by metal-organic vapour-phase epitaxy. We show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets, resulting in a microfaceting of the nanowires. We discuss these findings in a nucleation context, where we present an idea on how the twin planes form. This investigation contributes to the understanding of defect formation in nanowires. One future prospect of such knowledge is to determine strategies on how to control the crystallinity of nanowires.
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| 3. |
- Johansson, Jonas, et al.
(författare)
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The structure of <1 1 1 > B oriented GaP nanowires
- 2007
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 298, s. 635-639
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Tidskriftsartikel (refereegranskat)abstract
- Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved.
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| 4. |
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| 5. |
- Karlsson, L. S., et al.
(författare)
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Structural Characterisation of GaP <111 > B Nanowires by HRTEM
- 2008
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Ingår i: Microscopy of Semiconducting Material 2007. - 0930-8989. - 9781402086144 ; 120, s. 229-232
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Konferensbidrag (refereegranskat)abstract
- GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.
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| 6. |
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| 7. |
- Seifert, Werner, et al.
(författare)
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Growth of one-dimensional nanostructures in MOVPE
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 272:1-4, s. 211-220
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Tidskriftsartikel (refereegranskat)abstract
- The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.
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