| 1. |
- Deppert, Knut, et al.
(författare)
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Epitaxielle Kristallnadeln und -bäume
- 2005
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Ingår i: Book of abstracts: DGKK-Jahrestagung, Köln, Germany (2005).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 2. |
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| 3. |
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| 4. |
- Dick Thelander, Kimberly, et al.
(författare)
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Self-assembled InAs nanowire networks
- 2005
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Ingår i: Book of extended abstracts: MRS Fall Meet, Boston, Ma, USA, 2005.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 5. |
- Dick Thelander, Kimberly, et al.
(författare)
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Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events
- 2004
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Ingår i: Nature Materials. - : Springer Science and Business Media LLC. - 1476-4660 .- 1476-1122. ; 3:6, s. 380-384
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Tidskriftsartikel (refereegranskat)abstract
- The formation of nanostructures with controlled size and morphology has been the focus of intensive research in recent years(1-10). Such nanostructures are important in the development of nanoscale devices and in the exploitation of the properties of nanomaterials(9). Here we show how tree-like nanostructures ('nanotrees') can be formed in a highly controlled way. The process involves the self-assembled growth of semiconductor nanowires via the vapour-liquid-solid(11) growth mode. This bottom-up method uses initial seeding by catalytic nanoparticles(12) to form the trunk, followed by the sequential seeding of branching structures. Each level of branching is controlled in terms of branch length, diameter and number, as well as chemical composition. We show, by high-resolution transmission electron microscopy, that the branching mechanism gives continuous crystalline (monolithic) structures throughout the extended and complex tree-like structures. The controlled seeding method that we report here has potential as a generic means of forming complex branching structures, and may also offer opportunities for applications, such as the mimicking of photosynthesis in nanotrees.
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| 6. |
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| 7. |
- Mårtensson, Thomas, et al.
(författare)
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Epitaxial III-V nanowires on silicon
- 2004
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 4:10, s. 1987-1990
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Tidskriftsartikel (refereegranskat)abstract
- We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.
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| 8. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for 0D and 1D physics and applications
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 25:2-3, s. 313-318
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Tidskriftsartikel (refereegranskat)abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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| 9. |
- Seifert, Werner, et al.
(författare)
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Growth of one-dimensional nanostructures in MOVPE
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 272:1-4, s. 211-220
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Tidskriftsartikel (refereegranskat)abstract
- The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.
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