| 1. |
- Mårtensson, Thomas, et al.
(författare)
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Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
- 2007
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Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 19, s. 1801-1801
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Tidskriftsartikel (refereegranskat)abstract
- Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.
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| 2. |
- Mårtensson, Thomas, et al.
(författare)
-
Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth
- 2003
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 14:12, s. 1255-1258
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Tidskriftsartikel (refereegranskat)abstract
- We report on a method of synthesizing arrays of individually seeded nanowires. An electron beam lithography and metal lift-off method was used to pattern InP(111)B substrates with catalysing gold particles. Vertical InP(111)B nanowire arrays were then grown from the gold particles, using metal-organic vapour phase epitaxy. The lithographic nature of the method allows individual control over each nanowire. Possible applications for such deterministic and uniform arrays include producing arrays of nanowire devices, two-dimensional photonic band gap structures and field emission displays, amongst others.
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| 3. |
- Svensson, C Patrik T, et al.
(författare)
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Monolithic GaAs/InGaP nanowire light emitting diodes on silicon
- 2008
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:30, s. 6-305201
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Tidskriftsartikel (refereegranskat)abstract
- Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.
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| 4. |
- Thelander, Claes, et al.
(författare)
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One dimensional heterostructures and resonant tunneling in III-V nanowires
- 2003
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Ingår i: 2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675). - 0780378202 ; , s. 151-152
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Konferensbidrag (refereegranskat)abstract
- We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors
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