| 1. |
- Bao, Jiming, et al.
(författare)
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Nanowire-induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate
- 2009
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Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 21:36, s. 3654-3654
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Tidskriftsartikel (refereegranskat)abstract
- InAs pyramids and platelets on a zinc-blende InAs substrate are found to exhibit a wurtzite crystal structure. induced by wurtzite InAs nanowires, wurtzite InAs thin film and its associated zinc-blende/wurtzite heterocrystalline heterostructures may open up new opportunities in band-gap engineering and related device applications.
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| 2. |
- Bao, Jiming, et al.
(författare)
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Optical properties of rotationally twinned InP nanowire heterostructures
- 2008
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 8:3, s. 836-841
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc blende InP nanowires. We have constructed the energy band diagram of the resulting multiquantum well heterostructure and have performed detailed quantum mechanical calculations of the electron and hole wave functions. The excitation power dependent blue-shift of the photoluminescence can be explained in terms of the predicted staggered band alignment of the rotationally twinned zinc blende/wurzite InP heterostructure and of the concomitant diagonal transitions between localized electron and hole states responsible for radiative recombination. The ability of rotational twinning to introduce a heterostructure in a chemically homogeneous nanowire material and alter in a major way its optical properties opens new possibilities for band-structure engineering.
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| 3. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint - a tool for realizing nano-bio research
- 2004
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Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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| 4. |
- Chen, Jianing, et al.
(författare)
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Surface-enhanced Raman scattering of rhodamine 6G on nanowire arrays decorated with gold nanoparticles
- 2008
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:27, s. 5-275712
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the surface-enhanced Raman scattering (SERS) of rhodamine 6G (R6G) adsorbed on Au nanoparticles attached to InP nanowires. We find that nanowire arrays act as frameworks for effective SERS substrates with a significantly higher Raman signal sensitivity than a planar framework of Au nanoparticles adsorbed two-dimensionally on a flat surface. The SERS signal displays a clear polarization-dependent effect when the nanowires are arranged in a row. We also find that the SERS signal increases with time during continuous laser illumination. The plasmon-enhanced optical forces between Au nanoparticles may either move pairs of nanoparticles closer together or attract adsorbed molecules by moving them to the junctions of Au nanoparticle aggregates. Such effects by plasmon optical forces may cause the observed increase of the SERS signal with continuous laser illumination.
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| 5. |
- Deppert, Knut, et al.
(författare)
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Epitaxielle Kristallnadeln und -bäume
- 2005
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Ingår i: Book of abstracts: DGKK-Jahrestagung, Köln, Germany (2005).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 6. |
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| 7. |
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| 8. |
- Dick Thelander, Kimberly, et al.
(författare)
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Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires
- 2005
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 5:4, s. 761-764
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Tidskriftsartikel (refereegranskat)abstract
- We report the temperature dependence of the Au-assisted growth of InAs nanowires in MOVPE. Extensive studies of the growth of such nanowires have attributed growth to the so-called vapor-liquid-solid (VLS) mechanism, with a liquid Au-In alloy particle. We assert here that growth is instead assisted by a solid particle and does not occur at all when the particle is a liquid. Thus the temperature range of InAs nanowire growth is limited by the melting of the Au-In alloy. Comparison with growth of InAs nanowires in the same system assisted by a layer of SiOx is used to support this conclusion.
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| 9. |
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| 10. |
- Dick Thelander, Kimberly, et al.
(författare)
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Growth of GaP nanotree structures by sequential seeding of 1D nanowires
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 272:1-4, s. 131-137
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Tidskriftsartikel (refereegranskat)abstract
- Complex nanostructures are becoming increasingly important for the development of nanoscale devices and functional nanomaterials. Precise control of size and morphology of these structures is critical to their fabrication and exploitation. We have developed a method for stepwise growth of tree-like nanostructures via the vapour liquid-solid (VLS) growth mode, demonstrated for III-V semiconductor materials. This method uses the initial seeding of nanowires by catalytic aerosol nanoparticles to form the trunk, followed by sequential seeding of branching structures. Here we present a detailed study of the growth of these complex structures using Gap. Diameter of each level of nanowires is directly determined by seed particle diameters, and number of branches is determined by seed particle density. Growth rate is shown to increase with temperature to a maximum corresponding to the temperature of complete decomposition of the Group-III precursor material, and subsequently decrease due to competition with bulk growth. Growth rate also depends on flow of the Group-III precursor, but not on the Group-V precursor. Finally, there is a relationship between the number of branches and their growth rate, suggesting that material diffusion plays a role in nanowire branch growth. (C) 2004 Elsevier B.V. All rights reserved.
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