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Sökning: WFRF:(Maximov Ivan)

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1.
  • Lewen, R, et al. (författare)
  • High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
  • 2002
  • Ingår i: Applied Physics Reviews. - : American Institute of Physics (AIP). - 1931-9401. ; 91:4, s. 2398-2402
  • Tidskriftsartikel (refereegranskat)abstract
    • We report comprehensive microwave measurements on a T-branch switch; a GaInAs/InP electron waveguide based structure. The study includes a small signal model of the device where limitations of high frequency operation are discussed. An example of large signal operation where the nonlinearity of the device is exploited by operating the T-branch switch as a frequency multiplier is demonstrated.
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2.
  • Martin, TP, et al. (författare)
  • The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards
  • 2003
  • Ingår i: Superlattices and Microstructures. - : Elsevier. - 0749-6036. ; 34:3-6, s. 179-184
  • Tidskriftsartikel (refereegranskat)abstract
    • We present measurements of the potential profile of etched GaInAs/InP billiards and show that their energy gradients are an order of magnitude steeper than those of surface-gated GaAs/AlGaAs billiards. Previously observed in GaAs/AlGaAs billiards, fractal conductance fluctuations are predicted to be critically sensitive to the billiard profile. Here we show that, despite the increase in energy gradient, the fractal conductance fluctuations persist in the harder GaInAs/InP billiards. (C) 2004 Elsevier Ltd. All rights reserved.
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3.
  • Maximov, Ivan, et al. (författare)
  • Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
  • 2002
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 666-668
  • Tidskriftsartikel (refereegranskat)abstract
    • We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
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4.
  • Maximov, Ivan, et al. (författare)
  • Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
  • 2003
  • Ingår i: Microelectronic Engineering. - : Elsevier. - 1873-5568. ; 67-8, s. 196-202
  • Tidskriftsartikel (refereegranskat)abstract
    • We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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5.
  • Shorubalko, Ivan, et al. (författare)
  • A novel frequency-doubling device based on three-terminal ballistic junction
  • 2002
  • Ingår i: Device Research Conference (Cat. No.02TH8606). - : IEEE - Institute of Electrical and Electronics Engineers Inc.. - 0780373170 ; , s. 159-160
  • Konferensbidrag (refereegranskat)abstract
    • Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature
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6.
  • Shorubalko, Ivan, et al. (författare)
  • A novel frequency-multiplication device based on three-terminal ballistic junction
  • 2002
  • Ingår i: IEEE Electron Device Letters. - : IEEE - Institute of Electrical and Electronics Engineers Inc.. - 0741-3106. ; 23:7, s. 377-379
  • Tidskriftsartikel (refereegranskat)abstract
    • In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
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7.
  • Tønnesen, Siren, et al. (författare)
  • Brain Age Prediction Reveals Aberrant Brain White Matter in Schizophrenia and Bipolar Disorder : A Multisample Diffusion Tensor Imaging Study
  • 2020
  • Ingår i: Biological Psychiatry. - : Elsevier BV. - 2451-9022. ; 5:12, s. 1095-1103
  • Tidskriftsartikel (refereegranskat)abstract
    • BACKGROUND: Schizophrenia (SZ) and bipolar disorder (BD) share substantial neurodevelopmental components affecting brain maturation and architecture. This necessitates a dynamic lifespan perspective in which brain aberrations are inferred from deviations from expected lifespan trajectories. We applied machine learning to diffusion tensor imaging (DTI) indices of white matter structure and organization to estimate and compare brain age between patients with SZ, patients with BD, and healthy control (HC) subjects across 10 cohorts.METHODS: We trained 6 cross-validated models using different combinations of DTI data from 927 HC subjects (18-94 years of age) and applied the models to the test sets including 648 patients with SZ (18-66 years of age), 185 patients with BD (18-64 years of age), and 990 HC subjects (17-68 years of age), estimating the brain age for each participant. Group differences were assessed using linear models, accounting for age, sex, and scanner. A meta-analytic framework was applied to assess the heterogeneity and generalizability of the results.RESULTS: Tenfold cross-validation revealed high accuracy for all models. Compared with HC subjects, the model including all feature sets significantly overestimated the age of patients with SZ (Cohen's d = -0.29) and patients with BD (Cohen's d = 0.18), with similar effects for the other models. The meta-analysis converged on the same findings. Fractional anisotropy-based models showed larger group differences than the models based on other DTI-derived metrics.CONCLUSIONS: Brain age prediction based on DTI provides informative and robust proxies for brain white matter integrity. Our results further suggest that white matter aberrations in SZ and BD primarily consist of anatomically distributed deviations from expected lifespan trajectories that generalize across cohorts and scanners.
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8.
  • Xu, Hongqi, et al. (författare)
  • A novel device principle for nanoelectronics
  • 2002
  • Ingår i: Materials Science and Engineering C: Materials for Biological Applications. - : Elsevier. - 0928-4931. ; 19:1-2, s. 417-420
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.
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9.
  • Xu, Hongqi, et al. (författare)
  • Novel nanoelectronic triodes and logic devices with TBJs
  • 2004
  • Ingår i: IEEE Electron Device Letters. - : IEEE - Institute of Electrical and Electronics Engineers Inc.. - 0741-3106. ; 25:4, s. 164-166
  • Tidskriftsartikel (refereegranskat)abstract
    • In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
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10.
  • Xu, Hongqi, et al. (författare)
  • Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. - : Lund University.
  • Konferensbidrag (refereegranskat)abstract
    • A three-terminal ballistic junction (TBJ) is a device in which three quantum point contacts are coupled via a ballistic region. Previous studies have shown that the TBJs exhibit a novel electrical property which has potential applications in nanoelectronics. Here, based on our recent theoretical and experimental investigations, we will demonstrate that various nanoelectronic devices can be fabricated using the TBJs as building blocks. In particular, the results of our recent design, fabrication, modeling and measurements of TBJ diodes and transistors, TBJ frequency multipliers, and TBJ logic gates will be presented and discussed
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