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Träfflista för sökning "WFRF:(Maximov Ivan) ;pers:(Kvennefors Anders)"

Sökning: WFRF:(Maximov Ivan) > Kvennefors Anders

  • Resultat 1-7 av 7
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2.
  • Graczyk, Mariusz, et al. (författare)
  • Nanoimprint stamps with ultra-high resolution : Optimal fabrication techniques
  • 2018
  • Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 190, s. 73-78
  • Tidskriftsartikel (refereegranskat)abstract
    • Single-digit nanometer patterning by nanoimprint lithography is a challenging task, which requires optimum stamp fabrication technique. In the current work, we present different strategies for technology of hard master stamps to make intermediate working stamps with sub-10 nm features. Methods of both negative and positive master stamps fabrication, based on EBL, RIE and ALD are described and compared. A single-step copying of negative master stamps using a polymer material is a preferred strategy to reach the ultra high-resolution. Lines as small as 5.6 nm are demonstrated in a resist using a combined thermal and UV-imprint with OrmoStamp material as a working stamp.
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3.
  • Graczyk, Mariusz, et al. (författare)
  • Optimization of a self-closing effect to produce nanochannels with top slits in fused silica
  • 2012
  • Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 30:6
  • Tidskriftsartikel (refereegranskat)abstract
    • The authors report on the fabrication of subsurfaced 100-600 nm wide nanochannels in fused silica with top slit openings in the size range of 5-10 nm. Such nanochannels can be used in combination with a nanofluidics system to guide molecular motors and quickly switch the chemical environment inside the nanochannels through diffusion via the top slits. To realize nanochannel top slits in this size range, the authors here demonstrate the use of a self-closing effect based on the volume expansion of a thin Si layer during oxidation. A high contrast electron beam lithography exposure step in conjunction with dry etching of SiO2 by reactive ion etching (RIE) and Si by inductively coupled plasma-RIE followed by wet etching of a fused silica substrate is used to create the initial slit before oxidation. The details of nanochannel fabrication steps are described and discussed. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4766317]
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4.
  • Jafari Jam, Reza, et al. (författare)
  • III-V nanowire synthesis by use of electrodeposited gold particles
  • 2015
  • Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 15:1, s. 134-138
  • Tidskriftsartikel (refereegranskat)abstract
    • Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis. By use of this method, a reduction in gold consumption by a factor of at least 300 was achieved, as compared to conventional thermal evaporation for the same pattern. Because this method also facilitates substrate reuse, a significantly reduced cost of the final device is expected. We investigate the morphology, crystallography, and optical properties of InP and GaAs nanowires grown from electrodeposited gold seed particles and compare them with the properties of nanowires grown from seed particles defined by thermal evaporation of gold. We find that nanowire synthesis, as well as the material properties of the grown nanowires are comparable and quite independent of the gold deposition technique. On the basis of these results, electrodeposition is proposed as a key technology for large-scale fabrication of nanowire-based devices.
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6.
  • Khan, Sabbir Ahmed, et al. (författare)
  • High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching
  • 2018
  • Ingår i: ACS Applied Nano Materials. - : American Chemical Society (ACS). - 2574-0970. ; , s. 2476-2482
  • Tidskriftsartikel (refereegranskat)abstract
    • ABSTRACT: Nanoimprint lithography (NIL) has the potential for low-cost andhigh-throughput nanoscale fabrication. However, the NIL quality and resolution areusually limited by the shape and size of the nanoimprint stamp features. Atomiclayer etching (ALE) can provide a damage-free pattern transfer with ultimate etchcontrol for features of all length scales, down to the atomic scale, and for all featuregeometries, which is required for good quality and high-resolution nanoimprintstamp fabrication. Here, we present an ALE process for nanoscale pattern transferand high-resolution nanoimprint stamp preparation. This ALE process is based onchemical adsorption of a monoatomic layer of dichloride (Cl2) on the siliconsurface, followed by the removal of a monolayer of Cl2-modified silicon by argonbombardment. The nanopatterns of different geometries, loadings, and pitcheswere fabricated by electron beam lithography on a silicon wafer, and ALE wassubsequently performed for pattern transfer using a resist as an etch mask. Thepost-ALE patterns allowed us to study the different effects and limitations of theprocess, such as trenching and sidewall tapering. The ALE-processed silicon wafers were used as hard nanoimprint stamps in a thermal nanoimprint process. Features as small as 30 nm were successfully transferred into a poly(methyl methacrylate) layer, which demonstrated the great potential of ALE in fabricating nanoimprint stamps with ultrahigh resolution.
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7.
  • Schwenke, Jörg, et al. (författare)
  • Digital in-line holography on amplitude and phase objects prepared with electron beam lithography.
  • 2012
  • Ingår i: Journal of Microscopy. - : Wiley. - 0022-2720. ; 247:2, s. 196-201
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the fabrication and characterization of amplitude and phase samples consisting of well defined Au or Al features formed on ultrathin silicon nitride membranes. The samples were manufactured using electron beam lithography, metallization and a lift-off technique, which allow precise lateral control and thickness of the metal features. The fabricated specimens were evaluated by conventional microscopy, atomic force microscopy and with the digital in-line holography set-up at the Lund Laser Centre. The latter uses high-order harmonic generation as a light source, and is capable of recovering both the shape and phase shifting properties of the samples. We report on the details of the sample production and on the imaging tests with the holography set-up.
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  • Resultat 1-7 av 7

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