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Sökning: WFRF:(Minar E) > Naturvetenskap

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1.
  • Hastings-Simon, S R, et al. (författare)
  • Spectral hole-burning spectroscopy in Nd3+: YVO4
  • 2008
  • Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 77:12
  • Tidskriftsartikel (refereegranskat)abstract
    • We present spectral hole-burning measurements on the 879 nm, I-4(9/2) -> F-4(3/2) transition in Nd3+ : YVO4. We observe antiholes in the spectrum along with long lived spectral holes, which demonstrates optical pumping between the ground state Zeeman levels. The spectral holes are narrow (homogeneous linewidth of 63 kHz) at 2.1 K with a 300 mT applied magnetic field. We also perform preliminary spectral tailoring in this material by creating a 40 MHz wide transmission window in the inhomogeneous absorption. These results show the potential of the Zeeman levels in Nd doped materials to be used for spectral tailoring for quantum and classical information processing.
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2.
  • Keqi, A., et al. (författare)
  • Electronic structure of the dilute magnetic semiconductor Ga1-xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
  • 2018
  • Ingår i: Physical Review B. - 2469-9950 .- 2469-9969. ; 97:15
  • Tidskriftsartikel (refereegranskat)abstract
    • We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
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