| 1. |
- Talneau, A., et al.
(författare)
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High-bandwidth transmission of an efficient photonic-crystal mode converter
- 2004
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Ingår i: Optics Letters. - 0146-9592 .- 1539-4794. ; 29:15, s. 1745-1747
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated both theoretically and experimentally the spectral behavior and the transmission and reflection performance of a photonic-crystal (PhC) mode converter upon an InP substrate. This taper exhibits 70% transmission efficiency on an 80-nm bandwidth when it couples a ridge access guide to a strongly confined single-missing-row PhC guide. Such a taper design included in a PhC bend contributes a large benefit to the overall transmission budget of the PhC-based link.
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| 2. |
- Wild, B., et al.
(författare)
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Temperature tuning of the optical properties of planar photonic crystal microcavities
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:6, s. 846-848
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Tidskriftsartikel (refereegranskat)abstract
- We report on the temperature tuning of the optical properties of photonic crystal (PhC) microcavities. Planar and one-dimensional cavities were made from two-dimensional PhCs etched in GaAs and InP based vertical waveguides. These systems were optically characterized by an internal light source technique. The samples were mounted on a Peltier stage in order to vary the temperature from 20 to 76degreesC. Linear dependence of the resonance wavelengths with respect to the temperature is observed with gradients dlambda/dT=0.09 and 0.1 nm/degreesC for GaAs and InP based cavities, respectively. These results are in agreement with theoretical calculations based on the thermal dependence of the refractive index of the PhC semiconductor component.
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| 3. |
- Mogg, Sebastian, et al.
(författare)
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High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
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