| 1. |
- Lynch, S.A., et al.
(författare)
-
Toward silicon-based lasers for terahertz sources
- 2006
-
Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 12:6, s. 1570-1577
-
Tidskriftsartikel (refereegranskat)abstract
- Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.
|
|
| 2. |
- Rauter, P., et al.
(författare)
-
Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
- 2007
-
Ingår i: New Journal of Physics. - : Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft. - 1367-2630. ; 9
-
Tidskriftsartikel (refereegranskat)abstract
- We report the quantitative and direct determination of hole intersubband relaxation times in a voltage biased SiGe heterostructure using density matrix calculations applied to a four-level system in order to interpret photocurrent (PC) pump-pump experiments. One consistent set of parameters allows the simulation of two kinds of experiments, namely pump-pump photocurrent experiments at a free electron laser (wavelength 7.9 mu m) and the laser-power dependence of the PC signal. This strongly confirms the high reliability of these parameter values, of which the most interesting in respect to Si based quantum cascade laser development is the extracted heavy-hole relaxation time. The simulations show that this relaxation time directly determines the experimentally observed decay of the pump-pump photocurrent signal as a function of the delay time. For a heavy hole intersubband spacing of 160 meV, a value of 550 fs was obtained. The experimental method was further applied to determine the LH1-HH1 relaxation time of a second sample with a transition energy below the optical phonon energy. The observed relaxation time of 16 ps is consistent with the value found for the same structure by transmission pump-probe experiments.
|
|
| 3. |
- Zhao, Ming, et al.
(författare)
-
Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
- 2006
-
Ingår i: Journal of luminescence. - : Elsevier BV. - 0022-2313. ; 121:2, s. 403-408
-
Tidskriftsartikel (refereegranskat)abstract
- Three strain-symmetrized Si/SiGe multi-quantum well structures, designed for probing the carrier lifetime of intrawell intersubband transitions between heavy hole 1 (HH1) and light hole 1 (LH1) states with transition energies below the optical phonon energy, were grown by molecular beam epitaxy at low temperature on fully relaxed SiGe virtual substrates. The grown structures were characterized by using various experimental techniques, showing a high crystalline quality and very precise growth control. The lifetime of the LH1 excited state was determined directly with pump-probe spectroscopy. The measurements indicated an increase of the lifetime by a factor of 2 due to the increasingly unconfined LH1 state, which agreed very well with the design. It also showed a very long lifetime of several hundred picoseconds for the holes excited out of the well to transit back to the well through a diagonal process.
|
|
