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Träfflista för sökning "WFRF:(Ni Wei Xin) "

Sökning: WFRF:(Ni Wei Xin)

  • Resultat 1-10 av 62
  • [1]234567Nästa
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1.
  • Kristanl, Matej, et al. (författare)
  • The Seventh Visual Object Tracking VOT2019 Challenge Results
  • 2019
  • Ingår i: 2019 IEEE/CVF INTERNATIONAL CONFERENCE ON COMPUTER VISION WORKSHOPS (ICCVW). - : IEEE COMPUTER SOC. - 9781728150239 ; , s. 2206-2241
  • Konferensbidrag (refereegranskat)abstract
    • The Visual Object Tracking challenge VOT2019 is the seventh annual tracker benchmarking activity organized by the VOT initiative. Results of 81 trackers are presented; many are state-of-the-art trackers published at major computer vision conferences or in journals in the recent years. The evaluation included the standard VOT and other popular methodologies for short-term tracking analysis as well as the standard VOT methodology for long-term tracking analysis. The VOT2019 challenge was composed of five challenges focusing on different tracking domains: (i) VOT-ST2019 challenge focused on short-term tracking in RGB, (ii) VOT-RT2019 challenge focused on "real-time" short-term tracking in RGB, (iii) VOT-LT2019 focused on long-term tracking namely coping with target disappearance and reappearance. Two new challenges have been introduced: (iv) VOT-RGBT2019 challenge focused on short-term tracking in RGB and thermal imagery and (v) VOT-RGBD2019 challenge focused on long-term tracking in RGB and depth imagery. The VOT-ST2019, VOT-RT2019 and VOT-LT2019 datasets were refreshed while new datasets were introduced for VOT-RGBT2019 and VOT-RGBD2019. The VOT toolkit has been updated to support both standard short-term, long-term tracking and tracking with multi-channel imagery. Performance of the tested trackers typically by far exceeds standard baselines. The source code for most of the trackers is publicly available from the VOT page. The dataset, the evaluation kit and the results are publicly available at the challenge website(1).
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2.
  • Tang, Ting-Ting, et al. (författare)
  • Impaired thymic export and apoptosis contribute to regulatory T-cell defects in patients with chronic heart failure.
  • 2011
  • Ingår i: PLoS ONE. - 1932-6203. ; 6:9, s. e24272-
  • Tidskriftsartikel (refereegranskat)abstract
    • Animal studies suggest that regulatory T (T(reg)) cells play a beneficial role in ventricular remodeling and our previous data have demonstrated defects of T(reg) cells in patients with chronic heart failure (CHF). However, the mechanisms behind T(reg-)cell defects remained unknown. We here sought to elucidate the mechanism of T(reg-)cell defects in CHF patients.
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3.
  • Adnane, Bouchaib, et al. (författare)
  • Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
  • 2004
  • Konferensbidrag (refereegranskat)abstract
    • Multiple modulation-doped Ge-dot/SiGe-QW stack structures were grown using MBE, and processed as FET devices for mid/far infrared detection. From a non-optimized device, a broadband photoresponse has been observed in the mid-infrared range of 3-15 μm. A peak responsivity was estimated to be as high as 100 mA/W at T= 20 K. This work indicates that SiGE QD/QW structures using the lateral transport geometry can be a potential candidate for photodetectors operating in far-infrared range.
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4.
  • Adnane, Bouchaib (författare)
  • Optical characterization of Silicon-based self-assembled nanostructures
  • 2010
  • Doktorsavhandling (övrigt vetenskapligt)abstract
    • This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. When correlated with numerical analysis, these resonances were directly related to the co-existence of spatially direct (inside the SiGe dot) and indirect (across the Si/Ge interface) recombination processes involving different dot populations selected by the monitored detection energy for PLE acquisition. The characteristics of these two transitions were further studied in detail by PLE (in some case implemented together with selective PL) on various samples, which contained either only one Ge dot layer or multiple Gedot/Si stacks, grown at substrate temperatures ranging from 430 to 580 °C; especially the temperature- and excitation power-dependence of the excitation properties. The results illustrated that the electronic structure of SiGe dots are influenced by size, Ge composition, as well as strain connected, and sometimes a mixed effect. Another attempt of the project was the fabrication of lateral transport mid-infrared photodetectors based on multiple Ge-dot/Si stacked structures. A broadband photoresponsivity of the processed multi-finger detectors was estimated to be about 90 mA/W over 3-15 μm range at 20 K, and the peaked photoresponse was measured at ~10 μm. The origin of the measured photocurrent, as elucidated by photoluminescence and photoluminescence excitation spectroscopies, was related to intersubband absorption of normal incidence infrared radiation corresponding to energies between the ground states of the heavy hole and the light hole in the valence band of the SiGe/Si QDs, and subsequent charge transfer to the Ge 2D wetting layer acting as a conduction channel. The absence of photocurrent in the energy range expected for a transition from the ground state to the first excited state of the heavy hole indicated that the holes in the SiGe dots behave essentially as 2D in character rather than a truly 3D confinement, where the transitions between heavy holes states are not allowed for TE polarized radiation (normal incidence). Finally, Si(or Ge) nanocrystals embedded in mesoporous silica samples prepared by spincoating and atomic layer chemical vapor deposition were optically investigated by means of PL with various excitation powers, together with several attempts using different post rapid thermal annealing processes. The shape and energy position of the PL spectra of the nc-Si embedded in MS samples and a reference MS template without nc incorporation were rather similar, but the luminescence was much more intense for those embedded with nanocrystals. This implies that the emission mechanism for MS samples with or without nc-Si could be the same, i.e., the light emission was governed by the surface properties of silica. The semiconductor nanocrystals played a role by sensitizing the luminescence emission through generating more photo-excited carriers. These carriers were then trapped in the defect state e.g. the interfacial oxygen defect sites and subsequently recombine to increase the PL intensity.
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5.
  • Adnane, Bouchaib, et al. (författare)
  • Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
  • 2009
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X.
  • Tidskriftsartikel (övrigt vetenskapligt)abstract
    • A normal incidence photodetector operating at 8-14 μm is demonstrated using p-type δ-doped SiGe dot multilayer structures grown by molecular beam epitaxy on Si(001) substrates. Based on the experimental results of photoluminescence and photoluminescence excitation spectroscopies together with numerical analysis, the origin of the measured photocurrent was attributed to intersubband optical transitions between the heavy hole and light hole states of the valence band of the self-assembled SiGe dots and subsequent lateral transport of photo-excited carriers in the conduction channels formed by Ge wetting layers.
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6.
  • Adnane, Bouchaib, et al. (författare)
  • Photoluminescence excitation spectroscopy of self-assembled SiGe/Si quantum dots
  • 2009
  • Annan publikation (övrigt vetenskapligt)abstract
    • Photoluminescence excitation (PLE) experiments are reported for various self-assembled SiGe/Si dot samples grown on Si(001) by molecular beam epitaxy at substrate temperatures ranging from 430 to 580 C. Two excitation peaks were observed, and the characteristics of the involved optical transitions were studied in detail by PLE (in one case implemented together with selective photoluminescence, SPL) on different samples containing either only one SiGe dot layer or multiple SiGe-dot/Si stacks. The temperature- and power-dependence of the excitation properties together with the results of six-band k.p calculations support the assignment of the observed PLE peaks to spatially direct and indirect transitions collected from two different SiGe dot populations.
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7.
  • Adnane, Bouchaib, et al. (författare)
  • Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica
  • 2009
  • Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 53:8, s. 862-864
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoluminescence (PL) properties of mesoporous silica (MS) samples incorporated with Si or Ge nanocrystals (nc) have been investigated with various excitation powers and post-RTA processes. The analysis of experimental results revealed a superlinear intensity dependence (m = 1.7) in the MS reference sample without nanocrystals, while a sublinear behavior (m = 0.8) is observed for the nc-Si in MS. It thus suggests the same recombination responsible for the luminescence at similar to 2.75 eV for both samples, but different kinetic limitations for the carrier transfer processes. Si nanocrystals play in this case an important role in generating more photo-excited carriers, enhancing the PL intensity.
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8.
  • Adnane, Bouchaib, et al. (författare)
  • Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy
  • 2010
  • Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 96:18, s. 181107-
  • Tidskriftsartikel (refereegranskat)abstract
    • Well-resolved photoluminescence excitation (PLE) spectra are reported for selfassembled SiGe dots grown on Si(100) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.
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9.
  • Chen, P.Y., et al. (författare)
  • Synthesis design of artificial magnetic metamaterials using a genetic algorithm
  • 2008
  • Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 16:17, s. 12806-12818
  • Tidskriftsartikel (refereegranskat)abstract
    • In this article, we present a genetic algorithm (GA) as one branch of artificial intelligence (AI) for the optimization-design of the artificial magnetic metamaterial whose structure is automatically generated by computer through the filling element methodology. A representative design example, metamaterials with permeability of negative unity, is investigated and the optimized structures found by the GA are presented. It is also demonstrated that our approach is effective for the synthesis of functional magnetic and electric metamaterials with optimal structures. This GA-based optimization-design technique shows great versatility and applicability in the design of functional metamaterials. © 2008 Optical Society of America.
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10.
  • Cheng, M.H., et al. (författare)
  • Growth and characterization of Ge nanostructures selectively grown on patterned Si
  • 2008
  • Ingår i: Thin Solid Films. - : Elsevier Science B.V., Amsterdam.. - 0040-6090 .- 1879-2731. ; 517:1, s. 57-61
  • Tidskriftsartikel (refereegranskat)abstract
    • By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical omega/2 theta scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers; on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process,all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates.
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  • Resultat 1-10 av 62
  • [1]234567Nästa

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