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- Kristanl, Matej, et al.
(författare)
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The Seventh Visual Object Tracking VOT2019 Challenge Results
- 2019
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Ingår i: 2019 IEEE/CVF INTERNATIONAL CONFERENCE ON COMPUTER VISION WORKSHOPS (ICCVW). - : IEEE COMPUTER SOC. - 9781728150239 ; , s. 2206-2241
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Konferensbidrag (refereegranskat)abstract
- The Visual Object Tracking challenge VOT2019 is the seventh annual tracker benchmarking activity organized by the VOT initiative. Results of 81 trackers are presented; many are state-of-the-art trackers published at major computer vision conferences or in journals in the recent years. The evaluation included the standard VOT and other popular methodologies for short-term tracking analysis as well as the standard VOT methodology for long-term tracking analysis. The VOT2019 challenge was composed of five challenges focusing on different tracking domains: (i) VOT-ST2019 challenge focused on short-term tracking in RGB, (ii) VOT-RT2019 challenge focused on "real-time" short-term tracking in RGB, (iii) VOT-LT2019 focused on long-term tracking namely coping with target disappearance and reappearance. Two new challenges have been introduced: (iv) VOT-RGBT2019 challenge focused on short-term tracking in RGB and thermal imagery and (v) VOT-RGBD2019 challenge focused on long-term tracking in RGB and depth imagery. The VOT-ST2019, VOT-RT2019 and VOT-LT2019 datasets were refreshed while new datasets were introduced for VOT-RGBT2019 and VOT-RGBD2019. The VOT toolkit has been updated to support both standard short-term, long-term tracking and tracking with multi-channel imagery. Performance of the tested trackers typically by far exceeds standard baselines. The source code for most of the trackers is publicly available from the VOT page. The dataset, the evaluation kit and the results are publicly available at the challenge website(1).
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| 2. |
- Adnane, Bouchaib, et al.
(författare)
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Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
- 2004
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Konferensbidrag (refereegranskat)abstract
- Multiple modulation-doped Ge-dot/SiGe-QW stack structures were grown using MBE, and processed as FET devices for mid/far infrared detection. From a non-optimized device, a broadband photoresponse has been observed in the mid-infrared range of 3-15 μm. A peak responsivity was estimated to be as high as 100 mA/W at T= 20 K. This work indicates that SiGE QD/QW structures using the lateral transport geometry can be a potential candidate for photodetectors operating in far-infrared range.
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| 3. |
- Duteil, F., et al.
(författare)
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Er/O doped Si1-xGex alloy layers grown by MBE
- 2001
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Ingår i: Optical materials (Amsterdam). - 0925-3467 .- 1873-1252. ; 17:1-2, s. 131-134
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Silicon-based light emitting diodes (LEDs) containing an Er/O-doped Si1-xGex active layer have been studied. The structures were grown by molecular beam epitaxy (MBE), with Er and O concentrations of 5 × 1019 and 1 × 1020 cm-3, respectively, using Er and silicon monoxide sources. The microstructure has been studied by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy, and it is found that Er/O-doped Si0.92Ge0.08 layers of high crystalline quality, can be obtained. Electroluminescence (EL) measurements have been performed on reverse-biased Er/O doped diodes both from the surface and from the edge and the emission at 1.54 µm associated with the Er3+ ions has been studied at 300 K and lower temperatures. To evaluate the possibility to use a Si1-xGex layer for waveguiding in Si-based optoelectronics, studies of the refractive index n of strained Si1-xGex as a function of the Ge concentration have been done by spectroscopic ellipsometry in the range 0.3-1.7 µm. At 1.54 µm the refractive index increases monotonically with the Ge concentration up to n = 3.542 for a Ge concentration of 21.3%. © 2001 Elsevier Science B.V.
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| 8. |
- Haq, E., et al.
(författare)
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Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer
- 2002
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Konferensbidrag (refereegranskat)abstract
- The combination of a low temperature (LT) Si layer and an oxygen doped compliant layer grown at LT (200-250°C) was studied for the growth of thin, flat and highly relaxed Si1-xGex layers. Samples with 15-45 nm thick oxygen doped layers were used for 100-140 nm thick relaxed Si1-xGex layers. 2-D XRD mapping determined the degree of relaxation and composition of the Si1-xGex layers. AFM was used to study the roughness of the highly relaxed layers. It was observed that the roughness decreased with decreasing thickness of the LT Si layer. Layers, which show moderate relaxation during growth and are further relaxed by annealing at 875°C show the lowest roughness. © 2002 Elsevier Science B.V. All rights reserved.
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| 9. |
- Johansson, T., et al.
(författare)
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Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiers
- 2002
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Konferensbidrag (refereegranskat)abstract
- For 2+ GHz-bandwidth applications, the commonly used bipolar Si RF-power transistors in the output amplifiers in cellular base stations for mobile communications are pushed to the limit of performance. The objective of this work was to study the feasibility of using SiGe/Si grown on pre-processed Si wafers for power-HBTs operating at 25 V for improved performance. The large size HBT devices (2 × 0.1 mm2) were processed using an existing 100 mm poly-Si emitter RF power BJT technology with Au metallization and some necessary modified steps for SiGe implementation. The base layers with designed Ge and B profiles were deposited either by MBE or CVD. The devices showed very high BVcbo (>80 V) with very low leakage currents. The current gain was very stable over a wide IC range, and weakly influenced by the environmental temperature. At 2 GHz, the CW output power of 20 W (at 25 V) was obtained with an efficiency of 68% in class AB operation. The long-term temperature stability was excellent. SiGe RF power-HBTs could be operated at full output power for an extended time without any external temperature bias compensation, which is virtually impossible with conventional Si-BJTs. © 2002 Elsevier Science B.V. All rights reserved.
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| 10. |
- Karim, Amir, 1976-, et al.
(författare)
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Characterization of Er/O-doped Si-LEDs with low thermal quenching
- 2005
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Ingår i: Material Research Society Symposium Proceedings. ; , s. 117-124
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Konferensbidrag (refereegranskat)abstract
- Electroluminescence studies of MBE-grown Er/O-doped Si-diodes at reverse bias have been done. For some devices there is much reduced thermal quenching of the emission at 1.54 µm. There are examples where the temperature dependence is abnormal in that the intensity for a constant current even increases with temperature up to e.g. 80 oC. These devices have been studied with cross-sectional transmission electron microscopy to see the microstructure of the Er/O-doped layers as well as the B-doped SiGe-layers that are used as electron emitters during reverse bias. Although there are defects in the layers there is no evidence for large thick precipitates of SiO2. While reduced thermal quenching often is attributed to having the Er-ions within SiO2 layers, this is not the case for our structures as evidenced by our TEM-studies. The origin of the abnormal temperature dependence is attributed to the two mechanisms of breakdown in the reverse-biased diodes. At low temperature the breakdown current is mainly due to avalanche resulting in low-energy electrons and holes that quenches the intensity by Auger de-excitation of the Er-ions. At higher temperature the breakdown current is mainly phonon-assisted tunnelling which results in a more efficient pumping with less de-excitation of the Er-ions. Finally at the highest temperatures the thermal quenching sets in corresponding to an activation energy of 125 meV, which is slightly lower than 150 meV that has been reported in other studies.
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