| 1. |
- Adnane, Bouchaib, et al.
(författare)
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Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
- 2004
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Konferensbidrag (refereegranskat)abstract
- Multiple modulation-doped Ge-dot/SiGe-QW stack structures were grown using MBE, and processed as FET devices for mid/far infrared detection. From a non-optimized device, a broadband photoresponse has been observed in the mid-infrared range of 3-15 μm. A peak responsivity was estimated to be as high as 100 mA/W at T= 20 K. This work indicates that SiGE QD/QW structures using the lateral transport geometry can be a potential candidate for photodetectors operating in far-infrared range.
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| 2. |
- Elfving, Anders, et al.
(författare)
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Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
- 2006
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Ingår i: Applied physics letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89, s. 181901-1--181901-3
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Tidskriftsartikel (refereegranskat)abstract
- Strain relaxation of SiGe/Si(110) has been studied by x-ray reciprocal space mapping. To get information about the in-plane lattice mismatch in different directions, two-dimensional maps around, e.g., (260) and (062) reciprocal lattice points have been obtained from Si0.8Ge0.2/Si(110) samples, which were exposed to different annealing conditions. The in-plane lattice mismatch was found to be asymmetric with the major strain relaxation observed in the lateral [001] direction. This was associated with the formation and propagation of dislocations oriented along [10]. The relaxation of as-grown structures during postannealing is thus different from relaxation during growth, which is mainly along [10].
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| 3. |
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| 4. |
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| 5. |
- Elfving, Anders, 1976-
(författare)
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Near-infrared photodetectors based on Si/SiGe nanostructures
- 2006
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature.Heterojunction bipolar phototransistors were fabricated with 10 Ge dot layers in the base-collector (b-c) junction. With the illumination of near infrared radiation at 1.31 to 1.55 µm, the incident light would excite the carriers. The applied field across the b-c junction caused hole transport into the base, leading to a reduced potential barrier between the emitter-base (e-b) junction. Subsequently, this resulted in enhanced injection of electrons across the base into the collector, i.e., forming an amplified photo-induced current. We have therefore obtained significantly enhanced photo-response for the Ge-dot based phototransistors, compared to corresponding quantum dot p-i-n photodiodes. Responsivity values up to 470 mA/W were measured at 1.31 µm using waveguide geometry, and ∼2.5 A/W at 850 nm, while the dark current was as low as 0.01 mA/cm2 at –2 V.Metal-oxide field-effect phototransistors were also studied. These lateral detectors were processed with three terminals for source, drain and gate contacts. The Ge quantum dot layers were sandwiched between pseudomorphically grown SiGe quantum wells. The detector devices were processed using a multi-finger comb structure with an isolated gate contact on top of each finger and patterned metal contacts on the side edges for source and drain. It was found that the photo-responsivity was increased by a factor of more than 20 when a proper gate bias was applied. With VG above threshold, the measured response was 350 and >30 mA/W at 1.31 and 1.55 µm, respectively.Properties of Si/Si1-xGex nanostructures were examined, in order to facilitate proper design of the above mentioned transistor types of photodetectors. The carrier recombination processes were characterized by photoluminescence measurements, and the results revealed a gradual change from spatially indirect to direct transitions in type II Si1-xGex islands with increased measurement temperature. Energy dispersive X-ray spectrometry of buried Ge islands produced at different temperatures indicated a gradual decrease of the Ge concentration with temperature, which was due to the enhanced intermixing of Si and Ge atoms. At a deposition temperature of 730°C the Ge concentration was as low as around 40 %.Finally, the thermal stability of the Si/SiGe(110) material system, which is a promising candidate for future CMOS technology due to its high carrier mobility, was investigated by high resolution X-ray diffraction reciprocal space mapping. Anisotropic strain relaxation was observed with maximum in-plane lattice mismatch in the [001] direction.
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| 6. |
- Elfving, Anders, et al.
(författare)
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SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm
- 2003
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Ingår i: Physica E: Low-dimensional Systems and Nanostructures. - 1386-9477. ; 16:3-4, s. 528-532
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Tidskriftsartikel (refereegranskat)abstract
- The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BVceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.
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| 7. |
- Elfving, Anders, et al.
(författare)
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Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89, s. 083510-083513
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Tidskriftsartikel (refereegranskat)abstract
- A three-terminal metal-oxide-semiconductor field-effect transistor type of photodetector has been fabricated with a multiple stack of Ge dot/SiGe quantum-well heterostructures as the active region for light detection at 1.3–1.55 µm. Gate-dependent edge incidence photoconductivity measurements at room temperature revealed a strong dependence of the photoresponse on the gate voltage. At positive gate bias, the hole transport from the dots into the wells was improved, resulting in a faster response. The high photoresponsivity at negative VG, measured to be 350 mA W–1 at 1.31 µm and 30 mA W–1 at 1.55 µm, was ascribed to the photoconductive gain.
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| 9. |
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| 10. |
- Gomes, P.F., et al.
(författare)
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Type-I optical emissions in GeSi quantum dots
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:5
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Tidskriftsartikel (refereegranskat)abstract
- The authors studied the optical emission of GeSi quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 °C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. © 2007 American Institute of Physics.
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