| 1. |
- Andersson, Kristoffer, 1976, et al.
(author)
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Fabrication and characterization of field-plated buried-gate SiC MESFETs
- 2006
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In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575
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Journal article (peer-reviewed)abstract
- Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
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| 2. |
- Nilsson, Per-Åke, 1964, et al.
(author)
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An InP MMIC process optimized for low noise at Cryo
- 2014
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In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
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Conference paper (peer-reviewed)abstract
- An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
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| 3. |
- Nilsson, Per-Åke, 1964, et al.
(author)
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Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
- 2016
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In: Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. ; 1, s. Art. no. 7411746-
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Conference paper (peer-reviewed)abstract
- An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
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| 4. |
- Schleeh, Joel, 1986, et al.
(author)
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Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
- 2012
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In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
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Conference paper (peer-reviewed)abstract
- A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
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| 5. |
- Schleeh, Joel, 1986, et al.
(author)
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Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
- 2011
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In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011. - 1092-8669. - 9781457717536
-
Conference paper (peer-reviewed)abstract
- InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.
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| 6. |
- Schleeh, Joel, 1986, et al.
(author)
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Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
- 2012
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In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 33:5, s. 664-666
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Journal article (peer-reviewed)abstract
- We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise temperature of 1.2 K +/- 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of dc power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.
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| 7. |
- Sudow, Mattias, 1980, et al.
(author)
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The Chalmers microstrip SiC MMIC Process
- 2005
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In: Conference Proceedings Gighahertz 2005.
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Conference paper (peer-reviewed)abstract
- A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive components for high power operation were developed and verified. Circuit modelsfor both passive and active components have been formulated. Using the developed MMIC process anamplifier and a limiter have been manufactured.
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| 8. |
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| 9. |
- Carpenter, Sona, 1983, et al.
(author)
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A G-Band (140-220 GHz) planar stubbed branch-line balun in BCB technology
- 2013
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In: 2013 3rd Asia-Pacific Microwave Conference, APMC 2013, Seoul, South Korea, 5-8 November 2013. - 9781479914746 ; , s. 273-275
-
Conference paper (peer-reviewed)abstract
- A G-Band planar stubbed branch-line balun isdesigned and fabricated in 3μm thick BCB technology. Thistopology of the balun does not need thru-substrate via hole orthin-film resistor which makes it extremely suitable for realizationon single-layer high-resistivity substrates commonly used atmillimeter-wave or post-processed BCB layers on top of standardsemi-insulating wafers. The design is simulated and validated bymeasurements. Measurement results on two fabricated back-tobackbaluns show better than 10 dB input and output return lossand 3.2 dB insertion loss from 140 to 220 GHz.
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| 10. |
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