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Träfflista för sökning "WFRF:(Ohlsson C) ;pers:(Ohlsson B)"

Sökning: WFRF:(Ohlsson C) > Ohlsson B

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  • Ohlsson, B., et al. (författare)
  • Dearterialization of colorectal liver cancer : Institutional experience
  • 1999
  • Ingår i: Digestive Surgery. - : S. Karger AG. - 0253-4886 .- 1421-9883. ; 16:3, s. 229-235
  • Tidskriftsartikel (refereegranskat)abstract
    • Background/Aims: Preliminary clinical trials have suggested that dearterialization (interruption of arterial blood supply) is beneficial to patients with liver tumours. The aim of this report was to review the outcome of all patients undergoing dearterialization for colorectal liver metastases and to analyze whether refinement of the technique was followed by improvement in outcome. Methods: Retrospective review of 57 patients undergoing temporary (16 h) dearterialization during 1972-1984 (n = 24) or repeated transient dearterialization (1-2 h once or twice daily) during 1985-1995 (n = 33). Results: The median survival after start of treatment was 1.1 years, and the 5-year survival rate was 0%. There was no significant difference in survival between temporary and repeated transient dearterialization. Liver tumour volume and extrahepatic metastases varied negatively with survival. The temporary dearterialization procedure was followed by hepatic or intra-abdominal abscess formation in 6 patients (24%), leading to postoperative death in 2 patients (operative mortality 8%). Complications after repeated transient dearterialization were related mainly to technical problems with the occluder device. Conclusion: Although this was not a randomized study, it appears that dearterialization is of no benefit in colorectal liver cancer.
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  • Ohlsson, B., et al. (författare)
  • Detection of hepatic metastases in colorectal cancer : A prospective study of laboratory and imaging methods
  • 1993
  • Ingår i: European Journal of Surgery, Acta Chirurgica. - 1102-4151. ; 159:5, s. 275-281
  • Tidskriftsartikel (refereegranskat)abstract
    • Objective: To assess and compare the accuracy of imaging methods (ultrasonography (US), computed tomography (CT), angiography, arterially enhanced CT with computed tomographic arterial portography (CTA)), biochemical analyses, and surgical assessment during the operation, in detecting the presence or absence of hepatic metastases in patients with colorectal cancer. Design: Open study. Setting: University of Lund, Sweden. Subjects: 71 consecutive patients without clinical evidence of liver metastases at the time of the operation for removal of the primary tumour. Interventions: Regular biochemical tests for five to seven years, and CT and US one year after operation in all patients without confirmed metastases. Main outcome measures: Presence or absence of hepatic metastases. Results: Accuracy of surgical assessment, angiography, US, CT and CTA was 90, 77, 80, 82 and 83%, respectively, and corresponding predictive values of a negative test were 87, 75, 77, 80 and 84%. Measurement of bilirubin concentration and hepatic enzyme activities were not helpful, and that of carcinoembryonic antigen had an accuracy of only 70%. Accuracy and predictive values were not improved by combining tests. Conclusion: The accuracy of US, CT or CTA was not good enough to merrit routine use before operations for colorectal cancer. They are potentially valuable for monitoring progress at follow up, but this remains to be confirmed.
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  • You, S., et al. (författare)
  • Vertical GaN devices : Process and reliability
  • 2021
  • Ingår i: Microelectronics and reliability. - : Elsevier Ltd. - 0026-2714 .- 1872-941X. ; 126
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density. © 2021
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