| 1. |
- Bryllert, Tomas, et al.
(författare)
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11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler
- 2005
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 41:3, s. 131-132
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Tidskriftsartikel (refereegranskat)abstract
- A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs=InAlAs=AlAs epitaxial layers on an InP substrate.
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| 2. |
- Emadi, Arezoo, 1977, et al.
(författare)
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Design, Fabrication and characterisation of High Power HBV Diodes
- 2005
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Ingår i: 16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.). ; , s. Session: P05-04
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Konferensbidrag (refereegranskat)abstract
- We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.
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| 3. |
- Emadi, Arezoo, 1977, et al.
(författare)
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High power HBV multipliers for F- and G- band applications
- 2004
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Ingår i: IRMMW 2004/THz 2004 / M. Thumm, W. Wiesbeck. - 0780384903 ; , s. 319-320
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Konferensbidrag (refereegranskat)abstract
- Progress and realisation of applications in the 100-240 GHz region is inhibited by the lack of high-power sources. Therefore, in an effort to reach watts of output power, we have tailored devices, circuits, materials, and design and fabrication methods for improved thermal management and high overall conversion efficiencies.
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| 4. |
- Ingvarson, Mattias, 1974, et al.
(författare)
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An electro-thermal HBV model
- 2005
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Ingår i: IMS 2005. ; , s. 1151-1153
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Konferensbidrag (refereegranskat)
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| 5. |
- Ingvarson, Mattias, 1974, et al.
(författare)
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Design, analysis and modelling of heterostructure barrier varactors for sub-millimetre wave frequency quintuplers
- 2003
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Ingår i: GigaHertz 2003, Linköping Electronic Conference Proceedings. - 1650-3740.
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Konferensbidrag (refereegranskat)abstract
- We report on the design, modelling and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with output frequencies in the sub-millimetre wave region. The HBV is a symmetric varactor, thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device, the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the conventional Schottky varactor for high order frequency multiplier circuits. We present analytical models, which can be used to calculate parameters such as optimum doping concentration, layer structure, device area and series resistance for HBVs, as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools, for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency to 500 GHz for a planar, six-barrier InGaAs HBV of more than 30 %.
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| 6. |
- Ingvarson, Mattias, 1974, et al.
(författare)
-
Design and analysis of 500 GHz heterostructure barrier varactor quintuplers
- 2003
-
Ingår i: Proceedings of the 14th International Symposium on Space Terahertz Technology.
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Tidskriftsartikel (refereegranskat)abstract
- We report on the design and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with an output frequency of 500 GHz. The HBV is a symmetric varactor, thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device, the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the traditional Schottky varactor for high order frequency multiplier circuits. We present analytical, temperature dependent models, which can be used to calculate parameters such as optimum doping concentration, layer structure, device area and series resistance for HBVs, as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools, for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency for a planar, six-barrier InGaAs HBV of more than 30%, for an input power level of 19 dBm. A waveguide circuit realisation of a 500 GHz HBV quintupler is presented.
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| 7. |
- Ingvarson, Mattias, 1974, et al.
(författare)
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Heterostructure barrier Varactor Frequency Multipliers: Materials, Devices and Circuits
- 2001
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Ingår i: GigaHertz 2001.
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Konferensbidrag (refereegranskat)abstract
- The Heterostructure Barrier Varactor, HBV, diode is used in frequency multipliers at millimetre and sub millimetre wavelengths. Owing to its symmetrical properties only odd harmonics are generated, this greatly simplifies the design of frequency triplers and quintuplers. We report on new InP based material and device designs for planar, whisker contacted, and novel pillar structure HBVs. We present design methods with measured and simulated results. We also report on a new waveguide frequency tripler where HBV diodes are embedded in a microstrip environment together with the matching network for the fundamental and the third harmonic. Simulated results are presented for this new circuit topology, which is highly suitable for system integration
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| 8. |
- Ingvarson, Mattias, 1974, et al.
(författare)
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Thermal constraints for heterostructure barrier varactors
- 2004
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 25:11, s. 713-715
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Tidskriftsartikel (refereegranskat)abstract
- Current research on heterostructure barrier varactors (HBVs) devotes much effort to the generation of very high power levels in the millimeter wave region. One way of increasing the power handling capacity of HBVs is to stack several barriers epitaxially. However, the small device dimensions lead to very high temperatures in the active layers, deteriorating the performance. We have derived analytical expressions and combined those with finite element simulations, and used the results to predict the maximum effective number of barriers for HBVs. The thermal model is also used to compare the peak temperature and power handling capacity of GaAs and InP-based HBVs. It is argued that InP-based devices may be inappropriate for high-power applications due to the poor thermal conductivity of the InGaAs modulation layers.
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| 9. |
- Laisné, Alexander, et al.
(författare)
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A 500 GHz HBV Quintupler
- 2003
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Ingår i: THz2003. ; , s. P1-33
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Konferensbidrag (refereegranskat)
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| 10. |
- Olsen, Arne, 1974, et al.
(författare)
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A 100-GHz HBV frequency quintupler using microstrip elements
- 2004
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 14:10, s. 493-395
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Tidskriftsartikel (refereegranskat)abstract
- A new quintupler concept using a heterostructure barrier varactor (HBV) has been fabricated and measured. The multiplier consists of a quartz circuit mounted in a full height crossed waveguide block, and hence uses a mixture of waveguide components and microstrip elements. The embedding impedance for the fundamental frequency is provided by tuneable backshorts, whereas conventional microstrip circuit elements are used for impedance matching for the third and fifth harmonic. This topology is highly suitable for monolithic integration, and a peak conversion efficiency of 4.9 % was measured at 102.5 GHz with an input power of 13 dBm.
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