| 1. |
- Emadi, Arezoo, 1977, et al.
(författare)
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High power HBV multipliers for F- and G- band applications
- 2004
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Ingår i: IRMMW 2004/THz 2004 / M. Thumm, W. Wiesbeck. - 0780384903 ; , s. 319-320
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Konferensbidrag (refereegranskat)abstract
- Progress and realisation of applications in the 100-240 GHz region is inhibited by the lack of high-power sources. Therefore, in an effort to reach watts of output power, we have tailored devices, circuits, materials, and design and fabrication methods for improved thermal management and high overall conversion efficiencies.
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| 2. |
- Ingvarson, Mattias, 1974, et al.
(författare)
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Design, analysis and modelling of heterostructure barrier varactors for sub-millimetre wave frequency quintuplers
- 2003
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Ingår i: GigaHertz 2003, Linköping Electronic Conference Proceedings. - 1650-3740.
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Konferensbidrag (refereegranskat)abstract
- We report on the design, modelling and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with output frequencies in the sub-millimetre wave region. The HBV is a symmetric varactor, thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device, the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the conventional Schottky varactor for high order frequency multiplier circuits. We present analytical models, which can be used to calculate parameters such as optimum doping concentration, layer structure, device area and series resistance for HBVs, as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools, for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency to 500 GHz for a planar, six-barrier InGaAs HBV of more than 30 %.
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| 3. |
- Olsen, Arne, 1974, et al.
(författare)
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Heterostructure barrier varactor frequency triplers and quintuplers for THz electronics
- 2003
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Ingår i: GigaHertz Symposium.
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Konferensbidrag (refereegranskat)abstract
- A fixed tuned tripler and a quintupler using the Heterostructure Barrier Varactor (HBV) diode are presented. The tripler utilise a novel arrangement of antipodal finline, for waveguide to microstrip transition, and microstrip elements for the diode matching. An output power of -0.8 dBm at 128 GHz was measured for the tripler, which is close to the simulated performance. For the quintupler, an output power of 5.6 dBm at 98 GHz is predicted when ideal circuit elements are used.
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| 4. |
- Olsen, Arne, 1974, et al.
(författare)
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Planar HBV triplers and quintuplers for millimetre wavelengths
- 2003
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Ingår i: 3rd ESA Workshop on Millimetre Wave Technology and Applications.
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Konferensbidrag (refereegranskat)abstract
- In this paper, various fixed tuned tripler and quintupler designs are presented. Measurement of a microstrip tripler, using antipodal finline for transition to waveguide, shows a good result with a output power of -0.8 dBm at 128 GHz compared to simulation. Furthermore, a quintupler realised with coplanar-waveguide have been simulated to provide a conversion efficiency of 6.7% at 100 GHz.
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| 5. |
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