1. |
- Emadi, Arezoo, 1977, et al.
(author)
-
Design, Fabrication and characterisation of High Power HBV Diodes
- 2005
-
In: 16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.). ; , s. Session: P05-04
-
Conference paper (peer-reviewed)abstract
- We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.
|
|
2. |
|
|
3. |
- Vukusic, Josip, 1972, et al.
(author)
-
HBV tripler with 21% efficiency at 102 GHz
- 2006
-
In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194. ; 42:6, s. 355-356
-
Journal article (peer-reviewed)abstract
- An InAlGaAs/InP based heterostructure barrier varactor (HBV) frequency multiplier is designed and fabricated. Embedded on a circuit in a multiplier block, the system exhibits state-of-the-art, flange-to-flange efficiency of 21% at 102 GHz. The maximum output power was 32 mW, which could be further increased by scaling and integration of the device.
|
|