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- Park, M. S., et al.
(författare)
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InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
- 2014
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Ingår i: Electronics Letters. - Stevenage, United Kingdom : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 50:23, s. 1731-1732
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Tidskriftsartikel (refereegranskat)abstract
- High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
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