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Sökning: WFRF:(Phillips MR) > Linköpings universitet

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  • Gelhausen, O, et al. (författare)
  • Dissociation of H-related defect complexes in Mg-doped GaN
  • 2004
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 69:12
  • Tidskriftsartikel (refereegranskat)abstract
    • Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately Mg-doped (p-type) GaN was found to be strongly reduced by electron irradiation and of different chemical origin than the DAP at a similar energetic position in Si-doped (n-type) GaN. These results suggest that the acceptor responsible for the 3.27 eV DAP emission in Mg-doped GaN is Mg,and that the donor (20-30 meV) is hydrogen-related, possibly a (V-N-H) complex. This complex is dissociated either by electron irradiation or thermal annealing in N-2 or O-2 atmosphere. We found that upon electron irradiation, a deeper emission line (centered at 3.14 eV) emerged, which was assigned to a DAP consisting of the same Mg acceptor level and a deeper donor (100-200 meV) with a similar capture cross section as the donor in the 3.27 eV emission. Moreover, two different deep donor levels at 350+/-30 and 440+/-40 meV were identified as being responsible for,the blue band (2.8-3.0 eV) in heavily Mg-doped GaN. The donor level at 350+/-30 meV was strongly affected by electron irradiation and attributed to a H-related defect.
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4.
  • Godlewski, M, et al. (författare)
  • Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds
  • 2004
  • Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388 .- 1873-4669. ; 380:01-Feb, s. 45-49
  • Tidskriftsartikel (refereegranskat)abstract
    • Based on the results of optically detected magnetic resonance (ODMR) and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn2+ emission to spin dependent magnetic interactions between localized spins of Mn2+ ions and spins/magnetic moments of free carriers. We show that this mechanism is active both in bulk and in low dimensional structures, such as quantum wells (QWs), quantum dots (QDs) and nanostructures. (C) 2004 Elsevier B.V. All rights reserved.
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