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| 2. |
- Wernersson, Lars-Erik, et al.
(författare)
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Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
- 2002
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 20:2, s. 580-589
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Tidskriftsartikel (refereegranskat)abstract
- A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy.
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| 3. |
- Pettersson, Håkan, et al.
(författare)
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Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP
- 2005
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Ingår i: Microelectronics Journal. - Amsterdam : Elsevier. - 0026-2692. ; 36:3-6, s. 227-230
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we report on an overview of recent results from Fourier transform photocurrent (FTPC) measurements in the infrared spectral region on ensembles of self-assembled InAs quantum dots embedded in a matrix of InP. In interband PC, clear signals related to the dots are observed. Comparing the PC- and PL spectra, we observe that the fundamental transition is absent in the PC spectra, which we interpret in terms of Pauliblocking due to a filled electron ground state of the dots. Our results furthermore suggest that an Auger process is involved in forming the interband PC signal. In intersubband PC, peaks related to transitions from the dots' ground- and first excited states to the conduction band of the matrix are observed. Using a novel approach of combining FTPC with illumination from an additional external non-modulated light source, we have measured the spectral distribution of photoionization of excitons in quantum dots and found an exciton binding energy in good agreement with theoretical calculations.
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| 4. |
- Pettersson, Håkan, et al.
(författare)
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Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
- 2004
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 95:4, s. 1829-1831
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Tidskriftsartikel (refereegranskat)abstract
- The results from photoconductivity (PC) measurements on InAs dots embedded in InP are presented. The PC technique is recently applied to the study of InAs dots embedded in matrices of GaAs and Al0.3Ga0.7As matrix, respectively. It is demonstrated that this technique reveals important new physical insight into the electronic structure of the InAs/InP dots, information that cannot easily be obtained by other techniques.
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| 5. |
- Pettersson, Håkan, et al.
(författare)
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Optically induced charge storage and current generation in InAs quantum dots
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 65:7, s. 0733041-0733044
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Tidskriftsartikel (refereegranskat)abstract
- We report on optically induced charge storage effects and current generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.
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| 6. |
- Pettersson, Håkan, et al.
(författare)
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Photoexcitation of excitons in self-assembled quantum dots
- 2004
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 85:21, s. 5046-5048
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Tidskriftsartikel (refereegranskat)abstract
- Using an approach of combining Fourier transform infrared spectroscopy with resonant illumination from a secondary external light source, we have measured the photocurrent (PC) for multiple layers of self-assembled InAs dots embedded in a matrix of InP. Without external illumination, we observe photoexcitation of electrons from bound states in the dots to the InP barrier. By additional illumination from the external light source, a strong broadening of the PC signal is observed. We interpret this broadening in terms of photoexcitation of electrons in the presence of additional holes in the dots created by the external light source. We extract the spectral distribution of the photoexcitation process at 6 and 77 K, respectively, and show by comparison with theoretical calculations that it is consistent with an exciton binding energy of 20 meV.
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| 7. |
- Suyatin, Dmitry, et al.
(författare)
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Nano-Schottky contacts realized by bottom-up technique
- 2010
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Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - Piscataway, N.J. : IEEE Press. - 9781424435432 ; , s. 252-253
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Konferensbidrag (refereegranskat)abstract
- Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts. Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the InAs segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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| 8. |
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| 9. |
- Suyatin, Dmitry, et al.
(författare)
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Gallium phosphide nanowire arrays and their possible application in cellular force investigations
- 2009
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 27:6, s. 3092-3094
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Tidskriftsartikel (refereegranskat)abstract
- The authors report the fabrication of gallium phosphide nanowire arrays that can be used for cellular force measurements. The nanowire positions are defined using electron beam lithography and the nanowires are grown using metal organic vapor phase epitaxy. By varying the nanowire diameter, length, and spacing from substrate to substrate, they can expect to probe cell forces over several orders of magnitude, depending on the chosen substrate. The small diameter of the nanowires allows them to densely pack the array and to achieve unprecedented spatial resolution for future cell force-array applications.
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| 10. |
- Bordag, Michael, et al.
(författare)
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Shear stress measurements on InAs nanowires by AFM manipulation
- 2007
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Ingår i: Small. - Weinheim : Wiley-VCH Verlagsgesellschaft. - 1613-6810 .- 1613-6829. ; 3:8, s. 1398-1401
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Tidskriftsartikel (refereegranskat)abstract
- On an upward curve? The curvature of an elastically deformed nanowire pinned to a flat surface contains information about the maximum static friction force, and hence the shear stress, between the nanowire and the surface. Here, InAs nanowires are bent in a controlled manner using the tip of an atomic force microscope (see image). The shear stress can be obtained from a simple analysis according to the standard theory of elasticity.
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