| 1. |
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| 2. |
- Burke, Adam, et al.
(författare)
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InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.
- 2015
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 15:5, s. 2836-2843
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Tidskriftsartikel (refereegranskat)abstract
- We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.
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| 3. |
- Carrad, Damon J., et al.
(författare)
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Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors
- 2014
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:1, s. 94-100
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Tidskriftsartikel (refereegranskat)abstract
- We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.
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| 4. |
- Chen, I. Ju, et al.
(författare)
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Hot-Carrier Extraction in Nanowire-Nanoantenna Photovoltaic Devices
- 2020
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 20:6, s. 4064-4072
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Tidskriftsartikel (refereegranskat)abstract
- Nanowires bring new possibilities to the field of hot-carrier photovoltaics by providing flexibility in combining materials for band engineering and using nanophotonic effects to control light absorption. Previously, an open-circuit voltage beyond the Shockley-Queisser limit was demonstrated in hot-carrier devices based on InAs-InP-InAs nanowire heterostructures. However, in these first experiments, the location of light absorption, and therefore the precise mechanism of hot-carrier extraction, was uncontrolled. In this Letter, we combine plasmonic nanoantennas with InAs-InP-InAs nanowire devices to enhance light absorption within a subwavelength region near an InP energy barrier that serves as an energy filter. From photon-energy- and irradiance-dependent photocurrent and photovoltage measurements, we find that photocurrent generation is dominated by internal photoemission of nonthermalized hot electrons when the photoexcited electron energy is above the barrier and by photothermionic emission when the energy is below the barrier. We estimate that an internal quantum efficiency up to 0.5-1.2% is achieved. Insights from this study provide guidelines to improve internal quantum efficiencies based on nanowire heterostructures.
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| 5. |
- Chen, Yang, et al.
(författare)
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Semiconductor nanowire array for transparent photovoltaic applications
- 2021
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 118:19
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Tidskriftsartikel (refereegranskat)abstract
- The surface area of a building that could potentially be used for Building Integrated Photovoltaics would increase dramatically with the availability of transparent solar cells that could replace windows. The challenge is to capture energy from outside the visible region (UV or IR) while simultaneously allowing a high-quality observation of the outside world and transmitting sufficient light in the visible region to satisfactorily illuminate the interior of the building. In this paper, we show both computationally and experimentally that InP nanowire arrays can have good transparency in the visible region and high absorption in the near-infrared region. We show experimentally that we can achieve mean transparencies in the visible region of 65% and the radiative limit of more than 10% based on measured absorption and calculated emission. Our results demonstrate that nanowire arrays hold promise as a method to achieve transparent solar cells, which would fulfill the requirements to function as windows. In addition, we show that by optical design and by designing the geometry of nanowire arrays, solar cells can be achieved that absorb/transmit at wavelengths that are not decided by the bandgap of the material and that can be tailored to specific requirements such as colorful windows.
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| 6. |
- Fahlvik Svensson, Sofia, et al.
(författare)
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Control and understanding of kink formation in InAs-InP heterostructure nanowires.
- 2013
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 24:34
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Tidskriftsartikel (refereegranskat)abstract
- Nanowire heterostructures are of special interest for band structure engineering due to an expanded range of defect-free material combinations. However, the higher degree of freedom in nanowire heterostructure growth comes at the expense of challenges related to nanowire-seed particle interactions, such as undesired composition, grading and kink formation. To better understand the mechanisms of kink formation in nanowires, we here present a detailed study of the dependence of heterostructure nanowire morphology on indium pressure, nanowire diameter, and nanowire density. We investigate InAs-InP-InAs heterostructure nanowires grown with chemical beam epitaxy, which is a material system that allows for very abrupt heterointerfaces. Our observations indicate that the critical parameter for kink formation is the availability of indium, and that the resulting morphology is also highly dependent on the length of the InP segment. It is shown that kinking is associated with the formation of an inclined facet at the interface between InP and InAs, which destabilizes the growth and leads to a change in growth direction. By careful tuning of the growth parameters, it is possible to entirely suppress the formation of this inclined facet and thereby kinking at the heterointerface. Our results also indicate the possibility of producing controllably kinked nanowires with a high yield.
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| 7. |
- Fahlvik Svensson, Sofia, et al.
(författare)
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Lineshape of the thermopower of quantum dots
- 2012
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 14
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Tidskriftsartikel (refereegranskat)abstract
- Quantum dots are an important model system for thermoelectric phenomena, and may be used to enhance the thermal-to-electric energy conversion efficiency in functional materials, by tuning the Fermi energy relative to the dots' transmission resonances. It is therefore important to obtain a detailed understanding of a quantum dot's thermopower as a function of the Fermi energy. However, so far it has proven difficult to take the effects of interactions into account in the interpretation of experimental data. In this paper, we present detailed measurements of the thermopower of quantum dots defined in heterostructure nanowires. We show that the thermopower lineshape is described well by a Landauer-type transport model that uses as its input experimental values of the dot conductance, which contains information about interaction effects.
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| 8. |
- Fast, Jonatan, et al.
(författare)
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Hot-carrier separation in heterostructure nanowires observed by electron-beam induced current
- 2020
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 31:39
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Tidskriftsartikel (refereegranskat)abstract
- The separation of hot carriers in semiconductors is of interest for applications such asthermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowiresoffer several potential advantages for effective hot-carrier separation such as: a high degree ofcontrol and flexibility in heterostructure-based band engineering, increased hot-carriertemperatures compared to bulk, and a geometry well suited for local control of light absorption.Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electricpower under global illumination, with an open-circuit voltage exceeding the Shockley-Queisserlimit. To understand this behaviour in more detail, it is necessary to establish control over theprecise location of electron-hole pair-generation in the nanowire. In this work we performelectron-beam induced current measurements with high spatial resolution, and demonstrate therole of the InP barrier in extracting energetic electrons.We interprete the results in terms ofhot-carrier separation, and extract estimates of the hot carriers’ mean free path.
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| 9. |
- Fast, Jonatan, et al.
(författare)
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Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics
- 2022
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Ingår i: ACS Applied Energy Materials. - : American Chemical Society (ACS). - 2574-0962. ; 5:6, s. 7728-7734
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Tidskriftsartikel (refereegranskat)abstract
- Using the excess energy of charge carriers excited above the band edge (hot carriers) could pave the way for optoelectronic devices, such as photovoltaics exceeding the Shockley-Queisser limit or ultrafast photodetectors. Semiconducting nanowires show promise as a platform for hot-carrier extraction. Proof of principle photovoltaic devices have already been realized based on InAs nanowires, using epitaxially defined InP segments as energy filters that selectively transmit hot electrons. However, it is not yet fully understood how charge-carrier separation, relaxation, and recombination depend on device design and on the location of optical excitation. Here, we introduce the use of an optical-beam-induced current (OBIC) characterization method, employing a laser beam focused close to the diffraction limit and a high precision piezo stage, to study the optoelectric performance of the nanowire device as a function of the position of excitation. The photocurrent response agrees well with modeling based on hot-electron extraction across the InP segment via diffusion. We demonstrate that the device is capable of producing power and estimate the spatial region within which significant hot-electron extraction can take place to be on the order of 300 nm away from the barrier. When comparing to other experiments on similar nanowires, we find good qualitative agreement, confirming the interpretation of the device function, while the extracted diffusion length of hot electrons varies. Careful control of the excitation and device parameters will be important to reach the potentially high device performance theoretically available in these systems.
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| 10. |
- Hoffmann, Eric A, et al.
(författare)
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Measuring Temperature Gradients over Nanometer Length Scales.
- 2009
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 9:2, s. 779-783
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Tidskriftsartikel (refereegranskat)abstract
- When a quantum dot is subjected to a thermal gradient, the temperature of electrons entering the dot can be determined from the dot's thermocurrent if the conductance spectrum and background temperature are known. We demonstrate this technique by measuring the temperature difference across a 15 nm quantum dot embedded in a nanowire. This technique can be used when the dot's energy states are separated by many kT and will enable future quantitative investigations of electron-phonon interaction, nonlinear thermoelectric effects, and the efficiency of thermoelectric energy conversion in quantum dots.
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