| 1. |
- Bentham, James, et al.
(författare)
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A century of trends in adult human height
- 2016
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Ingår i: eLIFE. - : eLife Sciences Publications Ltd. - 2050-084X. ; 5
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Tidskriftsartikel (refereegranskat)abstract
- Being taller is associated with enhanced longevity, and higher education and earnings. We reanalysed 1472 population-based studies, with measurement of height on more than 18.6 million participants to estimate mean height for people born between 1896 and 1996 in 200 countries. The largest gain in adult height over the past century has occurred in South Korean women and Iranian men, who became 20.2 cm (95% credible interval 17.5–22.7) and 16.5 cm (13.3– 19.7) taller, respectively. In contrast, there was little change in adult height in some sub-Saharan African countries and in South Asia over the century of analysis. The tallest people over these 100 years are men born in the Netherlands in the last quarter of 20th century, whose average heights surpassed 182.5 cm, and the shortest were women born in Guatemala in 1896 (140.3 cm; 135.8– 144.8). The height differential between the tallest and shortest populations was 19-20 cm a century ago, and has remained the same for women and increased for men a century later despite substantial changes in the ranking of countries.
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| 2. |
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| 3. |
- Zhou, Bin, et al.
(författare)
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Worldwide trends in diabetes since 1980: A pooled analysis of 751 population-based studies with 4.4 million participants
- 2016
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Ingår i: The Lancet. - : Elsevier B.V.. - 0140-6736 .- 1474-547X. ; 387:10027, s. 1513-1530
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Tidskriftsartikel (refereegranskat)abstract
- Background: One of the global targets for non-communicable diseases is to halt, by 2025, the rise in the age standardised adult prevalence of diabetes at its 2010 levels. We aimed to estimate worldwide trends in diabetes, how likely it is for countries to achieve the global target, and how changes in prevalence, together with population growth and ageing, are aff ecting the number of adults with diabetes.Methods: We pooled data from population-based studies that had collected data on diabetes through measurement of its biomarkers. We used a Bayesian hierarchical model to estimate trends in diabetes prevalence-defined as fasting plasma glucose of 7.0 mmol/L or higher, or history of diagnosis with diabetes, or use of insulin or oral hypoglycaemic drugs-in 200 countries and territories in 21 regions, by sex and from 1980 to 2014. We also calculated the posterior probability of meeting the global diabetes target if post-2000 trends continue.Findings: We used data from 751 studies including 4372000 adults from 146 of the 200 countries we make estimates for. Global age-standardised diabetes prevalence increased from 4.3% (95% credible interval 2.4-17.0) in 1980 to 9.0% (7.2-11.1) in 2014 in men, and from 5.0% (2.9-7.9) to 7.9% (6.4-9.7) in women. The number of adults with diabetes in the world increased from 108 million in 1980 to 422 million in 2014 (28.5% due to the rise in prevalence, 39.7% due to population growth and ageing, and 31.8% due to interaction of these two factors). Age-standardised adult diabetes prevalence in 2014 was lowest in northwestern Europe, and highest in Polynesia and Micronesia, at nearly 25%, followed by Melanesia and the Middle East and north Africa. Between 1980 and 2014 there was little change in age-standardised diabetes prevalence in adult women in continental western Europe, although crude prevalence rose because of ageing of the population. By contrast, age-standardised adult prevalence rose by 15 percentage points in men and women in Polynesia and Micronesia. In 2014, American Samoa had the highest national prevalence of diabetes (>30% in both sexes), with age-standardised adult prevalence also higher than 25% in some other islands in Polynesia and Micronesia. If post-2000 trends continue, the probability of meeting the global target of halting the rise in the prevalence of diabetes by 2025 at the 2010 level worldwide is lower than 1% for men and is 1% for women. Only nine countries for men and 29 countries for women, mostly in western Europe, have a 50% or higher probability of meeting the global target.Interpretation: Since 1980, age-standardised diabetes prevalence in adults has increased, or at best remained unchanged, in every country. Together with population growth and ageing, this rise has led to a near quadrupling of the number of adults with diabetes worldwide. The burden of diabetes, both in terms of prevalence and number of adults aff ected, has increased faster in low-income and middle-income countries than in high-income countries.
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| 4. |
- Bangert, U., et al.
(författare)
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Electron energy loss spectroscopic studies of brown diamonds
- 2006
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Ingår i: Philosophical Magazine. - : Informa UK Limited. - 1478-6435 .- 1478-6443. ; 86:29-31, s. 4757-4779
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Tidskriftsartikel (refereegranskat)abstract
- We investigate both experimentally and theoretically, low-loss electron energy losses in brown type IIa monocrystalline diamonds both before and after high-temperature, high-pressure anneals which remove the brown colouration. We find additional losses within and near the band edge for brown diamond which are significantly reduced after treatment. The additional losses are not associated with dislocations. Graphitic inclusions are detected by EELS as well as TEM studies for some brown diamonds before treatment. These lead to pronounced subgap absorption. However, all brown diamonds exhibit additional losses which are due to point defects lying in the regions between dislocations. First principles theoretical modelling shows that common dislocations are not responsible for the brown colouration but a -bonded vacancy disk lying on {111} planes gives broad bands lying in the diamond band gap, possesses an optical absorption spectrum similar to that of brown diamond, and leads to additional electron energy losses in the band edge region. These and similar defects are suggested to be responsible for the brown colouration. Mechanisms are proposed for their formation and removal.
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| 6. |
- Carvahlo, A., et al.
(författare)
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Studies of the VO centre in Ge using first principles cluster calculations
- 2006
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 9:4-5, s. 489-493
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Tidskriftsartikel (refereegranskat)abstract
- The small or near-zero band gap of germanium found by supercell local density functional treatments causes difficulties in the study of the properties of charged defects in Ge. Here, we use large H-terminated Ge clusters together with a non-linear core corrected (NLCC) Ge pseudopotential to explore the structure, vibrational and electrical properties of the vacancy-oxygen complex (VO). The cluster possesses a gap sufficiently wide to contain defect related energy levels, thus allowing us to model the three charge states of the defect. The local vibrational modes (LVM) calculated for the neutral (VO0), negatively charged (VO-) and double negative (VO=) defect are 602, 684 and 694 cm- 1, and can be favourably compared with experimental values of 621, 669 and 716 cm- 1, respectively [Markevich VP, et al. Physica B 2003; 340-2, 844-8]. Using substitutional gold (Aus) as a marker defect, electric levels of VO are found at E (-/ 0) = Ev + 0.30 eV and E (= /-) = Ec - 0.29 eV, in excellent agreement with the respective experimental enthalpies for hole and electron emission Δ Hh (-/ 0) ≃ 0.32 eV and Δ He (= /-) = 0.26 eV, respectively. Finally, the migration, dissociation and reorientation energies of the defect are also reported.
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| 7. |
- Carvalho, A., et al.
(författare)
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Local-density-functional calculations of the vacancy-oxygen center in Ge
- 2007
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 75:11
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Tidskriftsartikel (refereegranskat)abstract
- We carry out a comprehensive density-functional study of the vacancy-oxygen (VO) center in germanium using large H-terminated Ge clusters. The importance of a nonlinear core correction to account for the involvement of the 3d electrons in Ge-O bonds is discussed. We calculate the electrical levels and the vibrational modes of VO0, VO-, and VO= finding close agreement with experiment. We also explore the reorientation, migration, and dissociation mechanisms of neutral and negatively charged VO and compare the calculated energy barriers with experimental data. We conclude that the defect is likely to anneal through both mechanisms.
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| 8. |
- Hounsome, L.S., et al.
(författare)
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Optical properties of vacancy related defects in diamond
- 2005
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 202:11, s. 2182-2187
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Tidskriftsartikel (refereegranskat)abstract
- ‹110› vacancy chains, multi-vacancy clusters and vacancy discs have been modeled using density functional theory within the AIMPRO and DFTB codes. While a connection can be established between the results on vacancy chains and previous EPR experiments, no connection can be made between the point defects and the optical properties of natural type IIa brown diamonds. However, a vacancy disc consisting of a {111} double plane of vacancies is stable and possesses an absorption spectrum similar to that found in brown diamonds.
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| 9. |
- Prezzi, D., et al.
(författare)
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Optical and electrical properties of vanadium and erbium in 4H-SiC
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 69:19, s. 193202-1
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Tidskriftsartikel (refereegranskat)abstract
- Local-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While isolated VSi possesses intra-d and ionization induced optical transitions around 0.94 and 2.9 eV respectively, the intense and temperature stable intra-f optical transitions due to Er are unlikely to be due to an isolated Er defect. It is suggested that both impurities can trap H and N forming complexes which may limit the electrical efficiency of V and act as Er related exciton traps.
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