Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Song Yuxin 1981) "

Sökning: WFRF:(Song Yuxin 1981)

  • Resultat 1-10 av 51
  • [1]23456Nästa
Sortera/gruppera träfflistan
  • Wang, Shu Min, 1963, et al. (författare)
  • Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
  • 2011
  • Ingår i: Physica Status Solidi (B): Basic Research. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
  • Fu, Yifeng, 1984, et al. (författare)
  • Templated Growth of Covalently Bonded Three-Dimensional Carbon Nanotube Networks Originated from Graphene
  • 2012
  • Ingår i: Advanced Materials. - 0935-9648 .- 1521-4095. ; 24:12, s. 1576-1581
  • Tidskriftsartikel (refereegranskat)abstract
    • A template-assisted method that enables the growth of covalently bonded three-dimensional carbon nanotubes (CNTs) originating from graphene at a large scale is demonstrated. Atomic force microscopy-based mechanical tests show that the covalently bonded CNT structure can effectively distribute external loading throughout the network to improve the mechanical strength of the material.
  • Song, Y., et al. (författare)
  • Dilute bismides for near and mid-infrared applications
  • 2013
  • Ingår i: 2013 15th International Conference on Transparent Optical Networks (ICTON). - 2162-7339. - 9781479906826 ; , s. 6602735-
  • Konferensbidrag (refereegranskat)abstract
    • Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.
  • Charpentier, Sophie, 1983, et al. (författare)
  • Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
  • 2017
  • Ingår i: Nature Communications. - 2041-1723. ; 8:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral p(x) + ip(y) wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using Bi2Te3 topological insulator. We demonstrate that the induced superconductivity is unconventional and consistent with a sign-changing order parameter, such as a chiral px + ipy component. The magnetic field pattern of the junctions shows a dip at zero externally applied magnetic field, which is an incontrovertible signature of the simultaneous existence of 0 and pi coupling within the junction, inherent to a non trivial order parameter phase. The nano-textured morphology of the Bi2Te3 flakes, and the dramatic role played by thermal strain are the surprising key factors for the display of an unconventional induced order parameter.
  • Chen, X, et al. (författare)
  • Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
  • 2013
  • Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 113:15, s. 153505-153507
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoluminescence (PL) measurements are performed on one GaSb/AlGaSb single-quantum-well (SQW) sample and two dilute-bismuth (Bi) GaSb/AlGaSb SQW samples grown at 360 and 380 °C, at low temperatures and under magnetic fields. Bimodal PL features are identified in the dilute-Bi samples, and to be accompanied by abnormal PL blueshift in the sample grown at 360 °C. The bimodal PL features are found to be from similar origins of band-to-band transition by magneto-PL evolution. Analysis indicates that the phenomenon can be well interpreted by the joint effect of interfacial large-lateral-scale islands and Al/Ga interdiffusion due to Bi incorporation. The interdiffusion introduces about 1-monolayer shrinkage to the effective quantum-well thickness, which is similar to the interfacial islands height, and the both together result in an unusual shallow-terrace-like interface between GaSbBi and AlGaSb. A phenomenological model is established, the Bi content of isoelectronic incorporation and the exciton reduced effective mass are estimated for the GaSbBi sample grown at 380 °C, and a value of about 21 meV/% is suggested for the bandgap bowing rate of GaSbBi. An effective routine is suggested for determining the Bi content and the depth of the shallow-terraces at interface in dilute-Bi SQW structures.
  • Fülöp, Attila, 1988, et al. (författare)
  • Phase transition of bismuth telluride thin films grown by MBE
  • 2014
  • Ingår i: Applied Physics Express. - 1882-0786 .- 1882-0778. ; 7:4, s. Art. no. 045503-
  • Tidskriftsartikel (refereegranskat)abstract
    • A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.
Skapa referenser, mejla, bekava och länka
  • Resultat 1-10 av 51
  • [1]23456Nästa

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy