| 1. |
- Gu, Yi, et al.
(författare)
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Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
- 2013
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Ingår i: Chinese Physics B. - : IOP Publishing. - 1674-1056. ; 22:3, s. 037802-
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Tidskriftsartikel (refereegranskat)abstract
- The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.
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| 2. |
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| 3. |
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| 4. |
- Segercrantz, N, et al.
(författare)
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Defect studies in MBE grown GaSbBi layers
- 2013
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Ingår i: 27th International Conference on Defects in Semiconductors 2013, Bologna, Italy, 2013.
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Konferensbidrag (refereegranskat)
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| 5. |
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| 6. |
- Song, Yuxin, 1981, et al.
(författare)
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MBE growth of Bi2Te3 for Thermoelectrics
- 2013
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Ingår i: Asia Communications and Photonics Conference, ACP. - Washington, D.C. : OSA. - 2162-108X.
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Konferensbidrag (refereegranskat)abstract
- Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated. Growth conditions were optimized based on Si(111) substrates with two different growth techniques, co-deposition followed by crystallization and direct growth. Growth of Bi 2Te3 on GaAs, GaN, et. al. substrates with different crystal directions and offcut angles were investigated. High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.
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| 7. |
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| 8. |
- Wang, Shu Min, 1963, et al.
(författare)
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Novel Dilute Bismides for IR Optoelectronics Applications
- 2013
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Ingår i: Asia Communications and Photonics Conference, ACP. - Washington, D.C. : OSA. - 2162-108X.
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Konferensbidrag (refereegranskat)abstract
- III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).
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| 9. |
- Ye, Hong, 1987, et al.
(författare)
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High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
- 2013
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Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 10:5, s. 765-768
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Tidskriftsartikel (refereegranskat)abstract
- Intermediate band solar cells have attracted significant interest as a possible means of achieving high conversion efficiency. Under optimized growth parameters, we successfully achieve a high density of uniform InAs QDs grown on various matrixes by molecular beam epitaxy. Incorporating N atoms into GaAs and AlGaAs barriers effectively compensates the internal compressive strain and avoids formation of dislocations and defects. The 50 stacking of high density and uniform InAs QDs was demonstrated without detectable dislocations using 26 nm GaNAs as a barrier.
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| 10. |
- Chen, X, et al.
(författare)
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Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
- 2013
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:15, s. 153505-153507
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence (PL) measurements are performed on one GaSb/AlGaSb single-quantum-well (SQW) sample and two dilute-bismuth (Bi) GaSb/AlGaSb SQW samples grown at 360 and 380 °C, at low temperatures and under magnetic fields. Bimodal PL features are identified in the dilute-Bi samples, and to be accompanied by abnormal PL blueshift in the sample grown at 360 °C. The bimodal PL features are found to be from similar origins of band-to-band transition by magneto-PL evolution. Analysis indicates that the phenomenon can be well interpreted by the joint effect of interfacial large-lateral-scale islands and Al/Ga interdiffusion due to Bi incorporation. The interdiffusion introduces about 1-monolayer shrinkage to the effective quantum-well thickness, which is similar to the interfacial islands height, and the both together result in an unusual shallow-terrace-like interface between GaSbBi and AlGaSb. A phenomenological model is established, the Bi content of isoelectronic incorporation and the exciton reduced effective mass are estimated for the GaSbBi sample grown at 380 °C, and a value of about 21 meV/% is suggested for the bandgap bowing rate of GaSbBi. An effective routine is suggested for determining the Bi content and the depth of the shallow-terraces at interface in dilute-Bi SQW structures.
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