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Sökning: WFRF:(Song Yuxin 1981) > (2013) > Zhang Yonggang

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1.
  • Gu, Yi, et al. (författare)
  • Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
  • 2013
  • Ingår i: Chinese Physics B. - : IOP Publishing. - 1674-1056. ; 22:3, s. 037802-
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.
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2.
  • Wang, Shu Min, 1963, et al. (författare)
  • Novel Dilute Bismides for IR Optoelectronics Applications
  • 2013
  • Ingår i: Asia Communications and Photonics Conference, ACP. - Washington, D.C. : OSA. - 2162-108X.
  • Konferensbidrag (refereegranskat)abstract
    • III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).
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