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Träfflista för sökning "WFRF:(Song Yuxin 1981) srt2:(2009);pers:(Larsson Anders 1957)"

Sökning: WFRF:(Song Yuxin 1981) > (2009) > Larsson Anders 1957

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1.
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2.
  • Tångring, Ivar, 1978, et al. (författare)
  • A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
  • 2009
  • Ingår i: Journal of Crystal Growth. - 0022-0248. ; 311, s. 1684-
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.
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3.
  • Tångring, Ivar, 1978, et al. (författare)
  • Metamorphic InGaAs telecom lasers on GaAs
  • 2009
  • Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819474766 ; Proc. SPIE 7230, s. 723003-
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy.The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, aswell as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocationdynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstratepulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.
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4.
  • Wang, Shu Min, 1963, et al. (författare)
  • Metamorphic InGaAs Materials and Telecom Lasers
  • 2009
  • Ingår i: International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper).
  • Konferensbidrag (refereegranskat)
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  • Resultat 1-4 av 4

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