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- Song, Yuxin, 1981, et al.
(författare)
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Molecular Beam Epitaxy Growth of GaSbxBi1-x
- 2011
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Ingår i: 28th North American Molecular Beam Epitaxy Conference (NAMBE2011), San Diego, USA (2011)..
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Konferensbidrag (refereegranskat)
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3. |
- Song, Yuxin, 1981, et al.
(författare)
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Molecular Beam Epitaxy Growth of InSbxBi1-x
- 2011
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Ingår i: 2nd International Workshop on Bismuth-Containing Semiconductors: Theory, Simulation and Experiment, Guildford, UK.
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Konferensbidrag (refereegranskat)
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4. |
- Wang, Shu Min, 1963, et al.
(författare)
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Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
- 2011
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Ingår i: 13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011. - 2162-7339. - 9781457708800
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Konferensbidrag (refereegranskat)abstract
- III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
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