| 1. |
- Wang, Shu Min, 1963, et al.
(författare)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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| 2. |
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| 3. |
- Song, Yuxin, 1981, et al.
(författare)
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Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
- 2011
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 323:1, s. 21-25
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Tidskriftsartikel (refereegranskat)abstract
- Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.
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| 4. |
- Song, Yuxin, 1981, et al.
(författare)
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Molecular Beam Epitaxy Growth of GaSbxBi1-x
- 2011
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Ingår i: 28th North American Molecular Beam Epitaxy Conference (NAMBE2011), San Diego, USA (2011)..
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Konferensbidrag (refereegranskat)
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| 5. |
- Song, Yuxin, 1981, et al.
(författare)
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Molecular Beam Epitaxy Growth of InSbxBi1-x
- 2011
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Ingår i: 2nd International Workshop on Bismuth-Containing Semiconductors: Theory, Simulation and Experiment, Guildford, UK.
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Konferensbidrag (refereegranskat)
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| 6. |
- Wang, Shu Min, 1963, et al.
(författare)
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Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
- 2011
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Ingår i: 13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011. - 2162-7339. - 9781457708800
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Konferensbidrag (refereegranskat)abstract
- III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
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