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Träfflista för sökning "WFRF:(Song Yuxin 1981) srt2:(2012);conttype:(refereed)"

Sökning: WFRF:(Song Yuxin 1981) > (2012) > Refereegranskat

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1.
  • Fu, Yifeng, 1984, et al. (författare)
  • Templated Growth of Covalently Bonded Three-Dimensional Carbon Nanotube Networks Originated from Graphene
  • 2012
  • Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 24:12, s. 1576-1581
  • Tidskriftsartikel (refereegranskat)abstract
    • A template-assisted method that enables the growth of covalently bonded three-dimensional carbon nanotubes (CNTs) originating from graphene at a large scale is demonstrated. Atomic force microscopy-based mechanical tests show that the covalently bonded CNT structure can effectively distribute external loading throughout the network to improve the mechanical strength of the material.
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2.
  • Song, Yuxin, 1981, et al. (författare)
  • Growth of GaSb1-xBix by molecular beam epitaxy
  • 2012
  • Ingår i: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. - : American Vacuum Society. - 2166-2754 .- 2166-2746. ; 30:2, s. 02B114-
  • Tidskriftsartikel (refereegranskat)abstract
    • Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.
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4.
  • Ye, Hong, 1987, et al. (författare)
  • Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
  • 2012
  • Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 2:4, s. 042158-
  • Tidskriftsartikel (refereegranskat)abstract
    • Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 °C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.
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