| 1. |
- Zhang, Guobin, et al.
(author)
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Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene
- 2018
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In: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 18:11, s. 7578-7583
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Journal article (peer-reviewed)abstract
- A thermal analysis of AlGaN/GaN high electron mobility transistors (HEMTs) with Graphene is investigated using Silvaco and Finite Element Method. Two thermal management solutions are adopted; first of all, graphene is used as dissipation material between SiC substrate and GaN buffer layer to reduce thermal boundary resistance of the device. At the same time, graphene is also used as a thermal spread material on the top of the source contacts to reduce thermal resistance of the device. The thermal analysis results show that the temperature rise of device adopting graphene decreases by 46.5% in transistors operating at 13.86 W/mm. Meanwhile, the thermal resistance of GaN HEMTs with graphene is 6.8 K/W, which is much lower than the device without graphene, which is 18.5 K/W. The thermal management solutions are useful for integration of large-scale graphene into practical devices for effective heat spreading in AlGaN/GaN HEMT.
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| 2. |
- Sun, Jie, 1977, et al.
(author)
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Insights into the Mechanism for Vertical Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition
- 2022
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In: Acs Applied Materials & Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 14:5
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Journal article (peer-reviewed)abstract
- Vertically oriented graphene (VG) has attracted attention for years, but the growth mechanism is still not fully revealed. The electric field may play a role, but the direct evidence and exactly what role it plays remains unclear. Here, we conduct a systematic study and find that in plasma-enhanced chemical vapor deposition, the VG growth preferably occurs at spots where the local field is stronger, for example, at GaN nanowire tips. On almost round-shaped nanoparticles, instead of being perpendicular to the substrate, the VG grows along the field direction, that is, perpendicular to the particles' local surfaces. Even more convincingly, the sheath field is screened to different degrees, and a direct correlation between the field strength and the VG growth is observed. Numerical calculation suggests that during the growth, the field helps accumulate charges on graphene, which eventually changes the cohesive graphene layers into separate three-dimensional VG flakes. Furthermore, the field helps attract charged precursors to places sticking out from the substrate and makes them even sharper and turn into VG. Finally, we demonstrate that the VG-covered nanoparticles are benign to human blood leukocytes and could be considered for drug delivery. Our research may serve as a starting point for further vertical two-dimensional material growth mechanism studies.
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| 3. |
- Dong, Yibo, et al.
(author)
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In Situ Growth of CVD Graphene Directly on Dielectric Surface toward Application
- 2020
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In: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 2:1, s. 238-246
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Journal article (peer-reviewed)abstract
- A technique for the in situ growth of patterned graphene by CVD has been achieved directly on insulating substrates at 800 degrees C. The graphene growth is catalyzed by a Ni-Cu alloy sacrificial layer, which integrates many advantages such as being lithography-free, and almost wrinkle-free, with a high repeatability and rapid growth. The etching method of the metal sacrificial layer is the core of this technique, and the mechanism is analyzed. Graphene has been found to play an important role in accelerating etching speeds. The Ni-Cu alloy exhibits a high catalytic activity, and thus, high-quality graphene can be obtained at a lower temperature. Moreover, the Ni-Cu layer accommodates a limited amount of carbon atoms, which ensures a high monolayer ratio of the graphene. The carbon solid solubility of the alloy is calculated theoretically and used to explain the experimental findings. The method is compatible with the current semiconductor process and is conducive to the industrialization of graphene devices.
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| 4. |
- Dong, Yibo, et al.
(author)
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Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst
- 2018
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In: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 29:36
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Journal article (peer-reviewed)abstract
- Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.
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| 5. |
- Liu, Lihui, 1985, et al.
(author)
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A Mechanism for Highly Efficient Electrochemical Bubbling Delamination of CVD-Grown Graphene from Metal Substrates
- 2016
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In: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; 3:8
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Journal article (peer-reviewed)abstract
- In most cases, transfer of chemical-vapor-deposited 2D materials from metallic foil catalysts onto a target substrate is the most necessary step for their promising fundamental studies and applications. Recently, a highly efficient and nondestructive electrochemical delamination method has been proposed as an alternative to the conventional etching transfer method, which alleviates the problem of cost and environment pollution because it eliminates the need to etch away the metals. Here, the mechanism of the electrochemical bubbling delamination process is elucidated by studying the effect of the various electrolytes on the delamination rate. A capacitor-based circuit model is proposed and confirmed by the electrochemical impedance spectroscopy results. A factor of 27 decrease in the time required for complete graphene delamination from the platinum cathodes is found when increasing the NaOH ratio in the electrolyte solution. The opposite trend is observed for delamination at the anode. The surface screening effect induced by nonreactive ions in the vicinity of the electrodes plays a key role in the delamination efficiency. The analysis is generic and can be used as a guideline to describe and design the electrochemical delamination of other 2D materials from their metal catalysts as well.
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| 6. |
- Nie, Junyang, et al.
(author)
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Systematic study on size and temporal dependence of micro-LED arrays for display applications
- 2023
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In: Photonics Research. - 2327-9125. ; 11:4, s. 549-557
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Journal article (peer-reviewed)abstract
- Micro-LEDs are one of the most promising candidates for next-generation displays, yet they are inconvenienced by the efficiency reduction induced by the sidewall defects when pursuing further scaled-down device dimensions. We have systematically investigated both the size and temporal dependence of micro-LEDs. Micro-LED arrays with a mesa size ranging from 7 to 100 μm were prepared for display purposes. The luminance and external quantum efficiency (EQE) were measured and discussed. Surprisingly, micro-LED arrays with a smaller mesa size exhibit a higher EQE under 100 ns pulse duration operation when compared with longer pulse duration operations. Under certain short-pulsed excitation, a 7 × 7 μm2 micro-LED array even exhibits a >20% higher EQE as compared to the direct current (DC) or the long duration pulse operation condition.We thus concluded that the notorious efficiency reduction induced by sidewall defects in small-sized micro-LED arrays could be significantly reduced by applying short-pulse voltages.
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| 7. |
- Pan, G. Z., et al.
(author)
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Analysis of optical coupling behavior in two-dimensional implant-defined coherently coupled vertical-cavity surface-emitting laser arrays
- 2018
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In: Photonics Research. - 2327-9125. ; 6:11, s. 1048-1055
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Journal article (peer-reviewed)abstract
- Optical coupling behavior and associated effects in two-dimensional implant-defined coherently coupled vertical-cavity surface-emitting laser (VCSEL) arrays are studied via both experiments and theoretical calculations. Experiments show that optical coupling between array elements can enhance the array’s output power. Additionally, optical coupling via leaky optical fields can provide extra optical gain for the array elements, which can then reduce the thresholds of these elements. Elements can even be pumped without current injection to emit light by receiving a strong leaky optical field from other array elements. Optical coupling can also cause unusual phenomena: the central elements in large-area coherently coupled VCSEL arrays that lase prior to the outer elements when the arrays are biased, or the average injection current required for each element to lase, which is much lower than the threshold for a single VCSEL. Theoretical calculations are performed to explain the experimental results.
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| 8. |
- Pan, G. Z., et al.
(author)
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Dependence of Beam Quality on Optical Intensity Asymmetry in In-Phase Coherently Coupled VCSEL Array
- 2018
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In: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 54:3
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Journal article (peer-reviewed)abstract
- Dependence of beam quality on optical intensity asymmetry among elements in in-phase coherently coupled vertical cavity surface emitting lasers array is analyzed using the finite-difference time domain solutions software. The analysis results reveal that the coupling efficiency of in-phased array decreases and the divergence increases as the level of optical intensity asymmetry increases. Furthermore, an addressable separated-contact three-element triangular in-phased array is fabricated and measured to verify the analysis. The array exhibits a relatively high of coupling efficiency of 24% and a near-diffraction-limit divergence of 3.2° (1.12 times of the diffraction limit, D.L.) when the optical intensity of each element is adjusted to be uniform. By degrading the optical intensity symmetry, the coupling efficiency decreases to 17.07% and the divergence increases to 4.03° ( 1.37× D.L.). After that, a much larger 10× 10 array exhibiting in-phase characteristics is produced and its beam quality and optical uniformity are measured and discussed. Analysis and experiment results demonstrate that symmetric optical intensity among elements is essential for in-phased array to achieve high beam quality. Employing separate contacts in the array is proved an effective way to obtain uniform optical intensity and achieve high beam quality.
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| 9. |
- Pan, Kui, et al.
(author)
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Highly effective transfer of micro-LED pixels to the intermediate and rigid substrate with weak and tunable adhesion by thiol modification
- 2023
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In: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 15:9, s. 4420-4428
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Journal article (peer-reviewed)abstract
- Based on transfer printing technology, micro-LED pixels can be transferred to different types and sizes of driving substrates to realize displays with different application scenarios. To achieve a successful transfer, GaN-based micro-LEDs first need to be separated from the original epitaxial substrate. Here, micro-LED pixels (each size 25 μm × 30 μm) on the sapphire substrate were transferred to a flexible semiconductor wafer processing (SWP) tape that is strongly sticky by conventional laser lift-off (LLO) techniques. The pixels on the SWP tape were then transferred by using a sacrificial layer of non-crosslinked oligomeric polystyrene (PS) film onto the intermediate and rigid substrate (IRS) with weak and tunable adhesion by thiol (-SH) modification. The electrode of the micro-LED is Au metal, which forms Au-S bonds with the surface of the IRS to fix the pixels. The rigid substrate helps ensure that the pixel spacing is almost unchanged during the stamp transfer process, and the weak and tunable adhesion facilitates the pixels being picked up by the stamp. The experimental results demonstrate that the pixels can be efficiently transferred to the IRS by LLO and sacrificial layer-assistance, which will provide the possibility of achieving the further transfer of pixels to different types and sizes of driving substrates by a suitable transfer stamp. The transfer process details are discussed, which can provide insights into the transfer of micro-nano devices through polymer sacrificial layers.
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| 10. |
- Skoblin, Grigory, 1991, et al.
(author)
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Graphene bolometer with thermoelectric readout and capacitive coupling to an antenna
- 2018
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 112:6
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Journal article (peer-reviewed)abstract
- We report on a prototype graphene radiation detector based on the thermoelectric effect. We used a split top gate to create a p-n junction in the graphene, thereby making an effective thermocouple to read out the electronic temperature in the graphene. The electronic temperature is increased due to the AC currents induced in the graphene from the incoming radiation, which is first received by an antenna and then directed to the graphene via the top-gate capacitance. With the exception of the constant DC voltages applied to the gate, the detector does not need any bias and is therefore very simple to use. The measurements showed a clear response to microwaves at 94 GHz with the signal being almost temperature independent in the 4-100 K temperature range. The optical responsivity reached ∼700 V/W.
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