| 1. |
- ANDERSSON, MICHAEL, 1988, et al.
(författare)
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Towards Graphene Electrodes for High Performance Acoustic Resonators
- 2013
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Ingår i: WOCSDICE. ; , s. 99-100
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Konferensbidrag (refereegranskat)abstract
- The tunable FBAR is a promising building block for versatile microwave systems. Utilizing graphene electrodes promises higher tunability and frequency. Increased parasitic resistance may hamper the Q-factor of the resonator. This paper reports the initiated study of graphene and contacts at DC and microwave frequencies for optimization of these parameters leading to graphene FBARs.
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| 2. |
- Buron, J.D., et al.
(författare)
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Correlation between THz AC and micro-four-point-probe DC conductivity mapping of graphene sheets
- 2012
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Ingår i: Laser and Tera-Hertz Science and Technology, LTST 2012. - Washington, D.C. : OSA.
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Konferensbidrag (refereegranskat)abstract
- We present quantitative correlation mapping of the sheet conductance of large areas of graphene. Terahertz time-domain spectroscopy (THz-TDS) maps the nanoscale conductance averaged over the beam spot size whereas micro four-point probe (M4PP) maps the micro-scale conductance.
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| 3. |
- Lindvall, Niclas, 1985, et al.
(författare)
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Transfer-free fabrication of suspended graphene grown by chemical vapor deposition
- 2012
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Ingår i: 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. NEMS 2012, Kyoto, 5 - 8 March 2012. - 9781467311243 ; , s. 19-22
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Konferensbidrag (refereegranskat)abstract
- Graphene, a true two-dimensional material with extraordinary mechanical- and electronic properties, is thought to be ideal for nanoelectromechanical systems (NEMS), like mass- and force sensors. Here, we present two different ways to fabricate suspended graphene for the intended use in future NEMS applications. The fabrication schemes do not require transfer of graphene from a catalyst where the graphene is grown on to another supporting substrate. The transfer is a source of several issues causing irreproducibility in large-scale production of graphene devices. We obtain suspended graphene membranes by locally removing the copper thin film on top of which the graphene is catalytically grown. The membranes are uniform and exhibit mechanical properties similar to those of exfoliated graphene. Also, suspended graphene beams with electrical interconnects are fabricated from non-catalytically grown graphene on SiO 2. Both approaches represent the first steps towards transfer-free fabrication of suspended graphene for NEMS applications.
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| 4. |
- Stattin, Martin, 1983, et al.
(författare)
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Graphene as transparent electrode for GaN-based VCSELs
- 2012
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Ingår i: International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan. ; , s. ThP-OD-34-
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 5. |
- Sun, Jie, 1977, et al.
(författare)
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Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates
- 2012
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Ingår i: 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. NEMS 2012, Kyoto, 5 - 8 March 2012. - 9781467311243 ; , s. 11-14
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Konferensbidrag (refereegranskat)abstract
- Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.
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| 6. |
- Teo, K. B. K., et al.
(författare)
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Wafer-scale graphene synthesis, transfer and FETs
- 2013
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Ingår i: Proceedings of the IEEE Conference on Nanotechnology. - 1944-9399 .- 1944-9380. - 9781479906758 ; , s. 1200-1203
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Konferensbidrag (refereegranskat)abstract
- Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.
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| 7. |
- Vyas, Agin, 1992, et al.
(författare)
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Investigation of palladium current collectors for vertical graphene-based microsupercapacitors
- 2019
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Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 1319:1
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Konferensbidrag (refereegranskat)abstract
- As microsystems are reduced in size and become integrated in the Internet of Things (IoT), they require an adequate power supply which can be integrated at the same size scale. Microsupercapacitors (MSCs), if coupled with on-chip harvesters, can offer solutions for a self-sustaining, on-chip power supply. However, the implementation of reliable MSC wafer-scale production compatible with CMOS technology remains a challenge. Palladium (Pd) is known as a CMOS compatible metal and, in this paper, we investigate the use of Pd as a contact material for vertical graphene (VG) electrodes in wafer-scale MSC fabrication. We show that a Ti diffusion barrier is required to prevent short-circuiting for the successful employment of Pd contacts. The fabricated MSCs demonstrate a capacitance of 1.3 μF/cm2 with an energy density of 0.42 μJ/cm2. Thus, utilization of a Ti diffusion barrier with a CMOS compatible Pd metal electrode is a step towards integrating MSCs in semiconductor microsystems.
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