| 1. |
- ANDERSSON, MICHAEL, 1988, et al.
(author)
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Microwave characterization of Ti/Au-graphene contacts
- 2013
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 103:17, s. 173111-
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Journal article (peer-reviewed)abstract
- In this paper, we report on a microwave characterization of the interface between Ti/Au contacts and chemical vapor deposition graphene using structures of Corbino geometry, with primary focus on extracting and modeling the capacitance associated with the contact region. It is found that with the current contact resistivity, ρc∼10^−6 Ωcm2, the contact capacitance, on the order Cc∼1 μF/cm2, has a negligible effect on microwave transmission through the contact below ∼100 GHz. Finally, a parallel plate capacitance model for the contact is presented.
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| 2. |
- ANDERSSON, MICHAEL, 1988, et al.
(author)
-
Towards Graphene Electrodes for High Performance Acoustic Resonators
- 2013
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In: WOCSDICE. ; , s. 99-100
-
Conference paper (peer-reviewed)abstract
- The tunable FBAR is a promising building block for versatile microwave systems. Utilizing graphene electrodes promises higher tunability and frequency. Increased parasitic resistance may hamper the Q-factor of the resonator. This paper reports the initiated study of graphene and contacts at DC and microwave frequencies for optimization of these parameters leading to graphene FBARs.
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| 3. |
- Tanzid, Mehbuba, 1988, et al.
(author)
-
Microwave noise characterization of graphene field effect transistors
- 2014
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:1, s. 013502-
-
Journal article (peer-reviewed)abstract
- The microwave noise parameters of graphene field effect transistors (GFETs) fabricated using chemical vapor deposition graphene with 1 μm gate length in the 2 to 8 GHz range are reported. The obtained minimum noise temperature (Tmin) is 210 to 610 K for the extrinsic device and 100 to 500 K for the intrinsic GFET after de-embedding the parasitic noise contribution. The GFET noise properties are discussed in relation to FET noise models and the channel carrier transport. Comparison shows that GFETs can reach similar noise levels as contemporary Si CMOS technology provided a successful gate length scaling is performed.
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