| 1. |
- Guo, W., et al.
(author)
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Rapid chemical vapor deposition of graphene on liquid copper
- 2016
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In: Synthetic Metals. - : Elsevier BV. - 0379-6779. ; 216, s. 93-97
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Journal article (peer-reviewed)abstract
- Molten copper is used to catalyze the graphene synthesis by chemical vapor deposition. The Cu has no grains above melting temperature, which is favorable for graphene growth. Using a vertical cold wall system, the deposition rate is drastically increased as compared with common hot-wall tube furnaces, pushing the method one step forward towards applications. A molybdenum-graphite Joule heater is used to avoid mechanical deformation of the carrier foil for the catalyst to ease the subsequent processes. The rapid deposition makes it possible to observe graphene growth on liquid Cu even at low pressure, where severe Cu evaporation simultaneously occurs.
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| 2. |
- Sun, Jie, 1977, et al.
(author)
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Electrochemical Bubbling Transfer of Graphene Using a Polymer Support with Encapsulated Air Gap as Permeation Stopping Layer
- 2016
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In: Journal of Nanomaterials. - : Hindawi Limited. - 1687-4129 .- 1687-4110. ; 2016
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Journal article (peer-reviewed)abstract
- Electrochemical bubbling transfer of graphene is a technique with high industrial potential due to its scalability, time- and cost-effectiveness, and ecofriendliness. However, the graphene is often damaged due to the turbulence and the trapped bubbles formed by the direct H2O and H+ permeation through the supporting polymer. We invent a graphene mechanical support of polyethylene terephthalate foil/plastic frame/poly(methyl methacrylate) sandwich, with an encapsulated air gap as the permeation stopping layer. The graphene damage is drastically reduced, as confirmed by the morphology and structural and electrical characterization, ultimately improving the controllability/reproducibility of the bubbling transfer of graphene and other two-dimensional materials.
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| 3. |
- Guo, W. L., et al.
(author)
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Process Optimization of Passive Matrix GaN-Based Micro-LED Arrays for Display Applications
- 2019
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In: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 48:8, s. 5195-5202
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Journal article (peer-reviewed)abstract
- Passive matrix GaN-based micro light-emitting diode (LED) arrays with two resolutions of 32 × 32 and 128 × 64 are designed and fabricated, and a micro control unit is used to drive the devices and display Chinese characters. The process of the micro-LED display arrays is systematically optimized, where emphasis has been put on solving two specific technical problems. First, the deep isolation trench is etched in two steps in order to decrease the slope of the isolation trench so as to ease the p electrode to “climb”. In this way, the otherwise easily broken p metal line is now very reliable. Second, a secondary growth method is employed to deposit SiO2 onto the n metal line as an insulation layer between the p and n electrode layers. Between the two deposition steps, the chips are rotated with a certain angle. Therefore, the probability of pinhole overlap is significantly reduced, and the insulation between the p and n electrode layers is guaranteed. Using the optimized micro-LED process, micro displays are fabricated and their electrical, optical, and thermal characteristics for two different pixel sizes are analyzed. Experiments show that the process optimization above helps realize the outstanding properties of the micro-LED display arrays, increase the device and system reliability. The work will contribute to the implementation of the GaN based micro-LED technologies in real life.
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| 4. |
- Liu, Lihui, 1985, et al.
(author)
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A Mechanism for Highly Efficient Electrochemical Bubbling Delamination of CVD-Grown Graphene from Metal Substrates
- 2016
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In: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; 3:8
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Journal article (peer-reviewed)abstract
- In most cases, transfer of chemical-vapor-deposited 2D materials from metallic foil catalysts onto a target substrate is the most necessary step for their promising fundamental studies and applications. Recently, a highly efficient and nondestructive electrochemical delamination method has been proposed as an alternative to the conventional etching transfer method, which alleviates the problem of cost and environment pollution because it eliminates the need to etch away the metals. Here, the mechanism of the electrochemical bubbling delamination process is elucidated by studying the effect of the various electrolytes on the delamination rate. A capacitor-based circuit model is proposed and confirmed by the electrochemical impedance spectroscopy results. A factor of 27 decrease in the time required for complete graphene delamination from the platinum cathodes is found when increasing the NaOH ratio in the electrolyte solution. The opposite trend is observed for delamination at the anode. The surface screening effect induced by nonreactive ions in the vicinity of the electrodes plays a key role in the delamination efficiency. The analysis is generic and can be used as a guideline to describe and design the electrochemical delamination of other 2D materials from their metal catalysts as well.
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| 5. |
- Sun, Jie, 1977, et al.
(author)
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Mechanism of Electrochemical Delamination of Two-Dimensional Materials from Their Native Substrates by Bubbling
- 2015
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In: Sensors. - : MDPI AG. - 1424-8220. ; 15:12, s. 31811-31820
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Journal article (peer-reviewed)abstract
- A capacitor-based circuit model is proposed to explain the electrochemical delamination of two-dimensional materials from their native substrates where produced gas bubbles squeeze into the interface. The delamination is actually the electric breakdown of the capacitor formed between the solution and substrate. To facilitate the procedure, the backside of the ubstrate has to be shielded so that the capacitor breakdown voltage can be reached. The screening effect can be induced either by nonreactive ions around the electrode or, more effectively, by an undetachable insulator. This mechanism serves as a guideline for the surface science and applications involving the bubbling delamination.
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| 6. |
- Sun, Jie, 1977, et al.
(author)
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Synthesis Methods of Two-Dimensional MoS2: A Brief Review
- 2017
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In: Crystals. - : MDPI AG. - 2073-4352. ; 7:7, s. Article no 198 -
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Research review (peer-reviewed)abstract
- Molybdenum disulfide (MoS2) is one of the most important two-dimensional materials after graphene. Monolayer MoS2 has a direct bandgap (1.9 eV) and is potentially suitable for post-silicon electronics. Among all atomically thin semiconductors, MoS2's synthesis techniques are more developed. Here, we review the recent developments in the synthesis of hexagonal MoS2, where they are categorized into top-down and bottom-up approaches. Micromechanical exfoliation is convenient for beginners and basic research. Liquid phase exfoliation and solutions for chemical processes are cheap and suitable for large-scale production; yielding materials mostly in powders with different shapes, sizes and layer numbers. MoS2 films on a substrate targeting high-end nanoelectronic applications can be produced by chemical vapor deposition, compatible with the semiconductor industry. Usually, metal catalysts are unnecessary. Unlike graphene, the transfer of atomic layers is omitted. We especially emphasize the recent advances in metalorganic chemical vapor deposition and atomic layer deposition, where gaseous precursors are used. These processes grow MoS2 with the smallest building-blocks, naturally promising higher quality and controllability. Most likely, this will be an important direction in the field. Nevertheless, today none of those methods reproducibly produces MoS2 with competitive quality. There is a long way to go for MoS2 in real-life electronic device applications.
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| 7. |
- Xiong, Fangzhu, et al.
(author)
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Transfer-free graphene-like thin films on GaN LED epiwafers grown by PECVD using an ultrathin Pt catalyst for transparent electrode applications
- 2019
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In: Materials. - : MDPI AG. - 1996-1944. ; 12:21, s. 1-12
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Journal article (peer-reviewed)abstract
- In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catalyst in the plasma-enhanced chemical vapor deposition (PECVD). The growth parameters were adjusted such that the high temperature exposure of GaN wafers was reduced to its minimum (deposition temperature as low as 600 °C) to ensure the intactness of GaN epilayers. In a comparison study of the Pt-GLTF GaN LED devices and Pt-only LED devices, the former was found to be superior in most aspects, including surface sheet resistance, power consumption, and temperature distribution, but not in optical transmission. This confirmed that the as-developed GLTF-based transparent electrodes had good current spreading, current injection and thermal spreading functionalities. Most importantly, the technique presented herein does not involve any material transfer, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices.
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| 8. |
- Xu, K., et al.
(author)
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GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition
- 2013
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 103:22, s. 5-
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Journal article (peer-reviewed)abstract
- Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 degrees C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.
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| 9. |
- Xu, K., et al.
(author)
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Graphene GaN-Based Schottky Ultraviolet Detectors
- 2015
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In: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 1557-9646 .- 0018-9383. ; 62:9, s. 2802-2808
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Journal article (peer-reviewed)abstract
- Graphene GaN-based Schottky ultraviolet detectors are fabricated. The monolayer graphene is grown by chemical vapor deposition. The graphene is much more transparent than metals, as confirmed by the fact that our devices retain their high responsivity up to 360-nm wavelength (corresponding to the band edge absorption of GaN). Importantly, by virtue of the tunable work function of graphene, the graphene GaN Schottky barrier height can be greatly enlarged. The built-in field is enhanced, and the detector performance is improved. The current ratio with and without luminescence is up to 1.6 x 10(4). The characteristic time constants of the devices are in the order of a few milliseconds. The device open-circuit voltage and short-circuit current are also increased. At last, special type Schottky devices consisting of GaN nanorods or surface-etched GaN are prepared for complementary study. It is found although the dry etching induced surface defects lead to an increase in the dark current, and these carrier traps also greatly contribute to the photoconductivity under luminescence, resulting in extraordinarily large responsivity (up to 360 A/W at -6 V).
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| 10. |
- Xu, K., et al.
(author)
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Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes
- 2013
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:16
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Journal article (peer-reviewed)abstract
- By virtue of the small active volume around Cu catalyst, graphene is synthesized by fast chemical vapor deposition (CVD) in a cold wall vertical system. Despite being highly polycrystalline, it is as conductive and transparent as standard graphene and can be used in light emitting diodes as transparent electrodes. 7-10 nm indium tin oxide (ITO) contact layer is inserted between the graphene and p-GaN to enhance hole injection. Devices with forward voltage and transparency comparable to those using traditional 240 nm ITO are achieved with better ultraviolet performances, hinting the promising future for application-oriented graphene by rapid CVD.
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