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- Abadikhah, Marie, 1992, et al.
(author)
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Effect of anode material and dispersal limitation on the performance and biofilm community in microbial electrolysis cells
- 2023
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In: Biofilm. - 2590-2075. ; 6
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Journal article (peer-reviewed)abstract
- In a microbial electrolysis cell (MEC), the oxidization of organic compounds is facilitated by an electrogenic biofilm on the anode surface. The biofilm community composition determines the function of the system. Both deterministic and stochastic factors affect the community, but the relative importance of different factors is poorly understood. Anode material is a deterministic factor as materials with different properties may select for different microorganisms. Ecological drift is a stochastic factor, which is amplified by dispersal limitation between communities. Here, we compared the effects of three anode materials (graphene, carbon cloth, and nickel) with the effect of dispersal limitation on the function and biofilm community assembly. Twelve MECs were operated for 56 days in four hydraulically connected loops and shotgun metagenomic sequencing was used to analyse the microbial community composition on the anode surfaces at the end of the experiment. The anode material was the most important factor affecting the performance of the MECs, explaining 54–80 % of the variance observed in peak current density, total electric charge generation, and start-up lag time, while dispersal limitation explained 10–16 % of the variance. Carbon cloth anodes had the highest current generation and shortest lag time. However, dispersal limitation was the most important factor affecting microbial community structure, explaining 61–98 % of the variance in community diversity, evenness, and the relative abundance of the most abundant taxa, while anode material explained 0–20 % of the variance. The biofilms contained nine Desulfobacterota metagenome-assembled genomes (MAGs), which made up 64–89 % of the communities and were likely responsible for electricity generation in the MECs. Different MAGs dominated in different MECs. Particularly two different genotypes related to Geobacter benzoatilyticus competed for dominance on the anodes and reached relative abundances up to 83 %. The winning genotype was the same in all MECs that were hydraulically connected irrespective of anode material used.
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| 2. |
- Li, Kai, et al.
(author)
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Metal thermopile infrared detector with vertical graphene
- 2023
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In: Wuli Xuebao/Acta Physica Sinica. - : Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences. - 1000-3290. ; 72:3
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Journal article (peer-reviewed)abstract
- Thermopile infrared detector is a kind of detector device mainly composed of thermocouple as the basic unit. Because of its simple principle, no need of cooling equipment, and other advantages, it has been widely used in various fields of production and life. However, the absorption rates of the materials in conventional thermopile devices are poor, and the majority of them are incompatible with microfabrication methods. In this work, a metal thermopile infrared detector with vertical graphene (VG) is designed and fabricated. The VG is grown via plasma enhanced chemical vapor deposition, and retained at the device’s thermal ends to provide the thermopile IR detector’s wideband and high response characteristics. The detector achieves a room temperature responsivity reaching a value as high as 1.53 V/W at 792 nm, which can increase the response results about 28 times and reduce the response time to 0.8 ms compared with the thermopile detector without VG. After systematically measuring the response results, it is finally found that there are three main mechanisms responsible for the response on the composite device. The first one is the response generated by the metal thermopile itself alone. The second one is the response increased eventually by the contribution of VG covered at the metal thermal junction that expands the temperature difference. The last one is the response generated by the temperature gradient existing inside the VG on the surface of the device after the absorption of heat. The portion of each partial response mechanism in the total response is also analyzed, providing a new reference direction for analyzing the response generation mechanism of thermopile detectors with other absorbing materials. The process is compatible with the microfabrication, while the device performance is enhanced and suitable for mass production. Furthermore, by utilizing the surface plasmon resonance to combine VG with metal nanoparticles, the material’ s light absorption is found to be enhanced significantly under the same conditions, and the resulting thermal voltage can be increased to 6 times. The results indicate that VG promises to possess practical applications, in many fields such as photoelectric sensing and power production devices. This technology provides a new method to manufacture high-performance thermopile infrared detectors and other sensor devices.
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| 3. |
- Yuan, Ying Kuo, et al.
(author)
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Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode
- 2021
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In: Wuli Xuebao/Acta Physica Sinica. - : Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences. - 1000-3290. ; 70:19
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Journal article (peer-reviewed)abstract
- In the information display field, micro-light-emitting diodes (micro-LEDs) possess high potentials and they are expected to lead the direction of developing the next-generation new display technologies. Their display performances are superior to those produced by the currently prevailing liquid crystal and organic light-emitting diode based technologies. However, the micro-LED pixels and their driving circuits are often fabricated on different wafers, which implies that the so-called mass transfer seems to be inevitable, thus facing an obvious bottleneck. In this paper, the emerging graphene field effect transistors are used as the driving elements and integrated onto the GaN micro-LEDs, which is because the pixels and drivers are prepared directly on the same wafer, the technical problem of mass transfer is fundamentally bypassed. Furthermore, in traditional lithographic process, the ultraviolet photoresist directly contacts the graphene, which introduces severe carrier doping, thereby leading to deteriorated graphene transistor properties. This, not surprisingly, further translates into lower performances of the integrated devices. In the present work, proposed is a technique in which the polymethyl methacrylate (PMMA) thin films act as both the protection layers and the interlayers when optimizing the graphene field effect transistor processing. The PMMA layers are sandwiched between the graphene and the ultraviolet photoresist, which is a brand new device fabrication process. First, the new process is tested in discrete graphene field effect transistors. Compared with those devices that are processed without the PMMA protection thin films, the graphene devices fabricated with the new technology typically show their Dirac point at a gate voltage (Vg) deviation from Vg = 0, that is, 22 V lower than their counterparts. In addition, an increase in the carrier mobility of 32% is also observed. Finally, after applying the newly developed fabrication process to the pixel-and-driver integrated devices, it is found that their performances are improved significantly. With this new technique, the ultraviolet photoresist no longer directly contacts the sensitive graphene channel because of the PMMA protection. The doping effect and the performance dropping are dramatically reduced. The technique is facile and cheap, and it is also applicable to two-dimensional materials besides graphene, such as MoS2 and h-BN. It is hoped that it is of some value for device engineers working in this field.
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